Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing

Abstract

We report conformal deposition of both RuO2 electrodes and PbZrxTi1−xO3 (PZT) capacitors in submicron Si trenches through the same in situ liquid source mist processing. The step coverage for the RuO2 electrodes is 75% at 225 °C. After electroding, we deposited Pb(Zr,Ti)O3 thin films and nanotubes using the same apparatus with remanent polarization of ∼15 μC/cm2. The step coverage was 59% on the sidewall and 79% on the bottom wall. Electrical testing showed charge storage (capacitance/trench) was 13±2 pF, with a breakdown voltage of 11.3±0.2 V and dielectric constant ε=166±30. This shows that a single inexpensive processing can produce fully electroded dynamic random access memory trenched capacitors with high aspect ratios and commercial electrical performance.

One-Step Fabrication of Copper Thin Films on Insulators Using Supercritical Fluid Deposition

“…Thin-film technologies that enable conformal coatings on these features have been applied to a variety of electronic devices, including microelectromechanical systems (MEMS), [5][6][7] dynamic random access memory (DRAM), [8][9][10] and through silicon via (TSV), 11,12 to exploit the large surface area and to functionalize the devices. Chemical vapor deposition (CVD), which is a technology having good step coverage, cannot meet these demands.…”

Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films

“…1 The great potential of the PZT system in the thin film form has been demonstrated along past years for applications in capacitors, 2 nonvolatile ferroelectric random memories, 3 and many others. PZT films produced by different physical and chemical methods exhibit different structural and electrical properties.…”

“…Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films E. B. Ara ujo, 1,a) E. C. Lima, 1 I. K. Bdikin, 2 and A. L. Kholkin…”

Highly Stable Ultrathin TiO2Based Resistive Random Access Memory with Low Operation Voltage

“…However, with the development of integrated circuits fabrication technologies and the size scaling down of semiconductor components, traditional floating gate memories fabrication had reached their physical limitations. [1][2][3] In order to solve this topic, some NVMs such as ferroelectric random access memories (FeRAMs), [4][5][6] phase change random access memory (PCRAMs), [7][8][9][10] magnetoresistive random access memories (MRAMs), [11][12][13][14] and resistive random access memories (RRAMs) [15][16][17][18][19] have been investigated. Among these memories, RRAM device has attracted considerable attentions for its amazing characteristics, like casual device structure, low operating power consumption, high switching speed, and high integrating density, make it possible for RRAM to be the next generation NVM.…”