2008
DOI: 10.1007/s00542-007-0498-7
|View full text |Cite
|
Sign up to set email alerts
|

Submicron-scale surface acoustic wave resonators fabricated by high aspect ratio X-ray lithography and aluminum lift-off

Abstract: A submicron-scale surface acoustic wave (SAW) resonator fabricated by high-aspect-ratio X-ray lithography (XRL) and metal lift-off that operates at microwave frequencies is presented. We demonstrate that XRL is especially well suited for SAW device templating, as long submicron-scale interdigitated transducer structures can be batch patterned with excellent structure quality. 0.4-2.0 lm thick PMMA layers were structured by X-ray lithography shadow projection using silicon nitride-based X-ray masks. Structures … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2008
2008
2024
2024

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 6 publications
(4 citation statements)
references
References 6 publications
0
4
0
Order By: Relevance
“…This continuous variation is promising, although smaller λ dom values would be required to demonstrate potential as DOEs. Existing standard lithography procedures allow SAW devices to be fabricated with submicron feature sizes [47]. If the relation given in equation ( 7) continued into this regime, λ dom below 1 µm would be achievable.…”
Section: Device Potentialmentioning
confidence: 99%
“…This continuous variation is promising, although smaller λ dom values would be required to demonstrate potential as DOEs. Existing standard lithography procedures allow SAW devices to be fabricated with submicron feature sizes [47]. If the relation given in equation ( 7) continued into this regime, λ dom below 1 µm would be achievable.…”
Section: Device Potentialmentioning
confidence: 99%
“…With a look toward the feasibility of fabrication techniques such as XRL [4] for producing precise high aspect ratio structures, simulations were performed with MR of 0.3 and varying the electrode metal height in an attempt to find an optimal h/ to support LLSAW. Figure 9 shows the magnitude of the admittance response with MR of 0.3 and h/ varied from 6.75 to 8%.…”
Section: Llsaw Mass Loading Effects: Metallization Ratio and Electrodmentioning
confidence: 99%
“…Certainly, the metal thickness in this case is not negligible, and even small irregularities in electrode thickness and sidewall geometry due to lithography and lift-off errors and also metal thickness deposition inhomogeneity can cause significant variation in electrode mass. As a result, new precision high-aspect ratio microfabrication techniques for realizing thick metal electrode SAW devices, such as deep X-ray lithography (XRL) as demonstrated recently by Achenbach et al [4], could become increasingly important.…”
Section: Introductionmentioning
confidence: 99%
“…X-ray lithography (XRL) is being used to fabricate other high-aspect-ratio RF devices [10][11][12] with novel geometries and high performance, but to date has received limited application for SAW devices. In [13], the feasibility of pattering thick (up to 2 μm) polymethylmethacrylate (PMMA) templates using XRL on silicon wafers representing line-andspace IDT structures for SAW applications at >1 GHz was demonstrated. The line-to-space pitch of the IDT patterns was 1590 nm, and the vertical to lateral aspect ratio of the freestanding 2 μm tall polymer structures was on the order of 2.5:1.…”
Section: Introductionmentioning
confidence: 99%