Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

Schuh, Philipp; Schöler, Michael; Wilhelm, Martin; Syväjärvi, Mikael; Litrico, Grazia; Via, F. La; Mauceri, Marco; Wellmann, Peter J.

doi:10.1016/j.jcrysgro.2017.09.002

Cited by 22 publications

(29 citation statements)

References 17 publications

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“…The experimental setup, the calculation of the supersaturation, as well as a description of our transfer process, can be seen in Figure 1. A more detailed description can be found in [10,13]. The transfer of 3C seeding layers was conducted on four-inch wafers, featuring a thickness of approximately 20 µm for the epitaxial 3C layer, on 580 µm thick, highly n-doped, on-axis (100) silicon substrates.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

et al. 2019

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The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).

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Section: Experimental Methodsmentioning

confidence: 99%

“…Due to the misfit between 3C-SiC and silicon, the wafers are under a lot of stress, leading to bent or even cracked material. By transferring CVD-grown layers on a SiC carrier, a seeding stack can be produced, to perform subsequent growth by SE [10].…”

Section: Introductionmentioning

confidence: 99%

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

et al. 2019

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“…It has been shown previously that n-and p-type 3C-SiC epitaxial layers with thickness of 3-5 µm can be formed on SiC substrates of hexagonal polytypes (4H-SiC) by the method of sublimation in a vacuum [1][2][3][4]. The goal of the present study was to examine the radiation hardness of the epitaxial layers.…”

Section: Introductionmentioning

confidence: 94%

Radiation Defects in Heterostructures 3C-SiC/4H-SiC

et al. 2019

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The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.

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“…The used setup as well as numerical simulation data can be found in [11,14]. The manufacturing process, creating 3C-SiC-on-SiC seeding stacks, was done on four inch wafers featuring a thickness of approximately 20 µm for the epitaxial layer, on 580 µm-thick, highly n-doped, on-axis (100) silicon wafers.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Consequently, thickness presents limitations. By transferring CVD-grown layers on a SiC carrier, a seeding stack can be produced to achieve subsequent growth by SE [11]. Seeding material of high quality and a thickness close to 1 mm would allow enhanced bulk growth using methods like modified PVT (M-PVT) or continuous-feed PVT (CF-PVT), increasing the thickness even more [7,12,13].…”

Section: Introductionmentioning

confidence: 99%

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Schuh

Via

Mauceri³

et al. 2019

Materials

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We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress.

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Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

Cited by 22 publications

References 17 publications

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

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