Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

Multiphoton absorption in germanium using pulsed infrared free-electron laser radiation

“…These results not only reveal the fundamental mechanisms associated with such processes, but also have applicability to important applications such as optically limiting devices, multiphoton microscopy, carrier generation deep inside samples via nonlinear absorption, 38,39 and two-photon three-dimensional lithography. 40 …”

Practicality of evaluating soft errors in commercial sub-90 nm CMOS for space applications

“…In lieu of heavy ion testing, pulsed laser irradiation has grown as an evaluation technique, largely due to the work of several groups [37,38,[51][52][53]. While there have been several direct comparisons of pulsed laser data to heavy ion data, cf.…”

“…4. Two-photon absorption [37,38] is ideally suited for testing SDRAMs since it injects photons through the backside of the die and most SDRAMs are flip-chip mounted -shown in Fig. 4(a).…”

Single-Event Effects in Microelectronics Induced by Through-Wafer Sub-Bandgap Two-Photon Absorption

“…The pulse energy is monitored with a calibrated large area InGaAs photodiode. The DUT is mounted on a motorized x-y-z translation platform with 0.1 µm resolution, and the optical pulses are focused through the wafer onto the front surface of the DUT with a 100 microscope objective, resulting a near-Gaussian beam profile with a diameter of 1.4 µm at focus [1]. Because the carrier deposition varies as I 2 , this corresponds to a carrier density distribution with a 1.0 µm diameter (full-width-at-half-maximum).…”

“…To alleviate this problem, and permit carrier injection through the wafer from the back-side of the device, a new method of carrier generation based on two-photon absorption (TPA) has been developed and demonstrated [1][2][3]. This method is based on nonlinear absorption at sub-bandgap optical wavelengths using high peak-power femtosecond laser pulses.…”