Subbandgap current collection through the implementation of a doping superlattice solar cell

Slocum, Michael A.; Forbes, David V.; Hubbard, Seth M.

doi:10.1063/1.4745921

Cited by 6 publications

(2 citation statements)

References 12 publications

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“…1 One reason why these devices have been proposed is due to the intrinsic radiation hardness that is gained by limiting the thickness of each of the active layers. 2,3 For a large portion of space missions the current state of the art technology provides sufficient lifetimes in the radiation environments they are exposed to, however numerous applications remain where higher radiation levels require alternate designs.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of radiation tolerance with the use of a doping superlattice solar cell

2014

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Solar cells utilizing doping superlattices in the active region of the device have been proposed as an alternative design to increase radiation hardness. Multiple diodes are connected together in parallel, where each diode can be as thin or thick as the design requires. Thinning the doped layers reduces the diffusion length requirements ensuring efficient carrier collection and maintenance of short circuit current. Experimental comparisons between nipi and a conventional pin solar cells that were irradiated with 1 MeV electrons at fluences from 4x10 14 to 2x10 15 e − /cm 2 show much more efficient maintenance of efficiency for the nipi design, maintaining nearly 100% efficiency up to a final dose of 2x10 15 e − /cm 2 . Further simulations have indicated that the efficient maintenance of voltage and fill factor are likely due to traps created in the nipi solar cell during the fabrication process. Beginning of life voltage and efficiency values can be improved significantly by limiting the trap density, while this has a minor impact on the efficiency comparison between a nipi and conventional device with respect to radiation.

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Section: Introductionmentioning

confidence: 99%

Enhancement of radiation tolerance with the use of a doping superlattice solar cell

2014

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“…Since 1970, when Esaki proposed to develop artificial semiconductors [ 12 ], n-type/intrinsic/p-type/intrinsic (nipi) superlattice structures have gained great attention in solar cell production. In the initial solar cell application, nipi is a doping superlattice (DSL) formed by repeating intrinsically doped epitaxial GaAs layers, which are stacked vertically in a parallel connected multi-period solar cell [ 13 ]. So far, this format has been widely applied and has found great success in detectors, lasers, and other photonic structures [ 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Absorption Spectrum of InAs Doping Superlattice Solar Cells

Peng,

Su,

et al. 2024

Nanomaterials

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InAs doping superlattice-based solar cells have great advantages in terms of the ability to generate clean energy in space or harsh environments. In this paper, multi-period InAs doping superlattice solar cells have been prepared.. Current density–voltage measurements were taken both in the dark and light, and the short-circuit current was estimated to be 19.06 mA/cm2. Efficiency improvements were achieved with a maximum one sun AM 1.5 G efficiency of 4.14%. Additionally, external quantum efficiency and photoluminescence with different temperature-dependent test results were taken experimentally. The corresponding absorption mechanisms were also investigated.

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An evaluation of fabrication methods for doping superlattice devices

Slocum

Forbes

Bohra

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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Subbandgap current collection through the implementation of a doping superlattice solar cell

Abstract: Articles you may be interested inInGaAs/GaAsP superlattice solar cells with reduced carbon impurity grown by low-temperature metal-organic vapor phase epitaxy using triethylgallium

Cited by 6 publications

References 12 publications

Enhancement of radiation tolerance with the use of a doping superlattice solar cell

Enhancement of radiation tolerance with the use of a doping superlattice solar cell

Investigation of the Absorption Spectrum of InAs Doping Superlattice Solar Cells

An evaluation of fabrication methods for doping superlattice devices

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