2010 17th IEEE International Conference on Electronics, Circuits and Systems 2010
DOI: 10.1109/icecs.2010.5724482
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Sub-THz high gain wide-band low noise amplifiers in 90nm RF CMOS technology

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“…The results presented in this work for the 2.5-2.7 THz chain indicate that this frequency range can easily be covered with the HIFI style versatile and broadband multiplier sources. Given the tremendous progress of high power GaN amplifiers [23], THz HEMT transistors [24], [25] or even CMOS amplifiers below 1 THz [26], it is predictable that the first and then the second stage of the present LO chain will be replaced in the coming years by transistor-based high-power drivers, much like the W-band Gunn oscillator was progressively replaced during the past decade by W-band synthesizers followed by W-band amplifiers. THz Schottky diode-based frequency multipliers will then reveal their full potential, being driven by power levels in the 3-10 mW range, where non-linearities can be better exploited for higher conversion efficiencies.…”
Section: Resultsmentioning
confidence: 99%
“…The results presented in this work for the 2.5-2.7 THz chain indicate that this frequency range can easily be covered with the HIFI style versatile and broadband multiplier sources. Given the tremendous progress of high power GaN amplifiers [23], THz HEMT transistors [24], [25] or even CMOS amplifiers below 1 THz [26], it is predictable that the first and then the second stage of the present LO chain will be replaced in the coming years by transistor-based high-power drivers, much like the W-band Gunn oscillator was progressively replaced during the past decade by W-band synthesizers followed by W-band amplifiers. THz Schottky diode-based frequency multipliers will then reveal their full potential, being driven by power levels in the 3-10 mW range, where non-linearities can be better exploited for higher conversion efficiencies.…”
Section: Resultsmentioning
confidence: 99%