sophisticated circuits such as ring oscillators [13][14][15] and logic gates. [16][17][18] However, the number and density of the transistors must be increased to enhance their performance and application, thus necessitating the downsizing of the OFETs. To date, various lithographic technologies such as multilayer photolithography, [19] deep X-ray lithography, [20] electron beam lithography, [21] and extreme ultraviolet lithography (EUV), [22,23] have been developed and used to fabricate transistors at the microto nanoscale. However, these approaches usually require expensive equipment or relatively complicated processing steps and, more importantly, may have compatibility issues with respect to the organic semiconductors, which are sensitive to chemicals and processing temperatures.Recently, Soleymani and Moran-Mirabal et al. [25] demonstrated the use of a shrinkable substrate that supports the standard fabrication process while enabling size reduction by application of an external stimulus. The shrink films consisted of prestressed polymers such as polystyrene (PS) that release the biaxial internal stress and relax the polymer chain after heating. [24] Previously, microfluidic channels [26,27] have been fabricated by using shrink films, as they can reduce the channel dimensions and form thick channel walls. [24] Biosensors with wrinkled electrodes have also used shrink film substrates to achieve small-scale electrodes with large surface areas, [25,26] thus potentially reducing the sheet resistance and solving the measurement bottleneck. As the film allows homogeneous shrinking, the shapes of the microfluidic channels and metal electrodes would remain unchanged after the size reduction. This homogeneous size reduction is particularly important in microelectronic fabrication to avoid shorting. [25,26] Moreover, studies have shown that the homogenous size reduction can be well controlled according to the material properties (e.g., the elastic modulus) and thickness of the deposition film, along with the wavelength and amplitude of the wrinkles that are formed during shrinkage as summarized in Figure S1 (Supporting Information).In the present study, both the size reduction and the potential use of the wrinkle structures to improve the electrical performance of the OFET is explored. The polystyrene shrinkable film substrate is shown to provide a 65-70% reduction in the effective area of the OFETs, along with reductions in the threshold voltage (from −1.44 to −0.18 V), the subthreshold In the development of flexible organic field-effect transistors (OFET), downsizing and reduction of the operating voltage are essential for achieving a high current density with a low operating power. Although the bias voltage of the OFETs can be reduced by a high-k dielectric, achieving a threshold voltage close to zero remains a challenge. Moreover, the scaling down of OFETs demands the use of photolithography, and may lead to compatibility issues in organic semiconductors. Herein, a new strategy based on the ductile properties of or...