2021
DOI: 10.1038/s41467-021-22192-2
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Sub-thermionic, ultra-high-gain organic transistors and circuits

Abstract: The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics. Here, by combining solution-processed monolayer organic crystal, ferroelectric HfZrOx gating and van der Waals fabrication, we realize flexible OTFTs that simultaneously deliver high transconductance and sub-60 mV/dec switching, under one-volt operating voltage. The overall optimization of transconductance, subthreshold swing and output resistance leads to transistor intrins… Show more

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Cited by 95 publications
(89 citation statements)
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“…Paired presynaptic illumination pulses with different pulse intervals Δ t yielded paired‐pulse facilitation (PPF) (Figure 2c ). [ 21 , 22 ] . We calculated PPF index by using the EPSC peak as induced by the second spike ( A 2 )/that induced the first spike ( A 1 ).…”
Section: Resultsmentioning
confidence: 99%
“…Paired presynaptic illumination pulses with different pulse intervals Δ t yielded paired‐pulse facilitation (PPF) (Figure 2c ). [ 21 , 22 ] . We calculated PPF index by using the EPSC peak as induced by the second spike ( A 2 )/that induced the first spike ( A 1 ).…”
Section: Resultsmentioning
confidence: 99%
“…Previously, intrinsic gains as high as 735, 1100, and 5.3 × 10 4 have been reported for monolayer organic crystal OFETs, [27] Schottky barrier organic transistors, [29] and 5.3 × 10 4 monolayer organic crystal OFETs with a negative-capacitance ferroelectric hafnium oxide dielectric layer, [28] respectively. As shown in Figure 6a,d, however, the g d value of the OFETs produced herein after shrinking is effectively limited to 4.126 × 10 −11 S in the subthreshold region (V G = −0.1 V, V DS = −1 V), and the g m value is 1.714 × 10 −6 S when |V G(on) − V G(off) | = 1 V. This low value of g d in the subthreshold region is the key to achieving a high intrinsic gain, and can be attributed to the wrinkle structure, which generates an increased resistance between the source-drain when the charge accumulation is very weak.…”
Section: Ssmentioning
confidence: 99%
“…These g d and g m values lead to an intrinsic gain of 4.151 × 10 4 , which is comparable to one of the highest previously reported values for an OFET having a hafnium oxide dielectric. [28] All of these electrical improvements in the shrunken OFET (low SS, low V TH , and high A V ) provide it with the potential for applications such as small scale, low voltage, high gain biological sensors or electronic skin. [38][39][40][41]…”
Section: Ssmentioning
confidence: 99%
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“…Impressively, organic semiconductors were attracted tremendous attention for soft circuits due to lightweight, solution processability and molecular tailorability for desired performance 72 . Luo et al 73 fabricated the flexible integrated ECG patch with 900 times amplification based on the organic thin‐film inverter. The flexible nonvolatile crossbar memristors based on vertical‐organic‐nanocrystal‐arrays demonstrated by Hu's group attained the multimodal switching behaviors in 10 3 ratios 74 .…”
Section: Epidermal Sensing Network System For On‐skin Digitalizationmentioning
confidence: 99%