Sub-terahertz microsecond optically controlled switch with GaAs active element beyond the photoelectric threshold

Abstract

We study an unusual working regime of a recently developed sub-terahertz microwave cavity-based switch. The resonator cavity includes a semiconductor plate which is illuminated by laser emission beyond the photoelectric threshold. Despite a significant change to the conventional process of photoelectric effect we have found that the switch works. Typical switching performance rate is about 1 μs for the regime. A process of carrier density relaxation beyond the photoelectric threshold is discussed. An idea of diagnostic method for the semiconductor's quality is proposed.

Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron

“…The characteristic shape of the curves exhibits a "saturation" behavior that has been observed extensively in previous experiments. 3,15,20 While the GaAs curve appears to reach saturation around 8 mJ/cm 2 , the Si wafer does not reach complete saturation even at the maximum energy density. This might indicate that additional laser energy would allow for a more thorough characterization of the Si wafer behavior.…”

260 GHz CW gyrotron heating substitution with second-long laser pulses in waveguide semiconductor switches

“…a gyrotron in a phase stabilization regime. Recent studies achieved nanosecond level of switching performance [5] for 260 GHz frequency band and 532 nm laser emission [6] using a semiconductor plate of plain gallium arsenide.…”

“…Sub-Terahertz waveguide semiconductor switches driven by laser emission [1] are used to cut a continuousworking (CW) microwave emission to series of wave packets [2,3]. The main advantage of the switches is low distortion to the phases of the packets' high frequency fillings at the output [4].…”