Sub-Poissonian Electronic and Photonic Noise Generation in Semiconductor Junctions

Edwards, Paul

doi:10.1071/ph99074

Cited by 7 publications

(1 citation statement)

References 7 publications

(20 reference statements)

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“…Going beyond the classical limit for shot noise, devices with sub-Poissonian (suppressed) shot noise have been demonstrated. This phenomenon, called Fano effect [1], is shown to result from temporal correlation mechanisms influencing particle flow, such as Coulomb blockade [2] or Pauli exclusion principle [3]. The Fano factor has been shown to assume values as low as 0.4 by imposing temporal correlations of charged carriers [4].…”

Section: Introductionmentioning

confidence: 99%

Sub-Poissonian shot noise of a high internal gain injection photon detector

Memiş¹,

Katsnelson²,

Kong³

et al. 2008

Opt. Express

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The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 mum. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.

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Section: Introductionmentioning

confidence: 99%

Sub-Poissonian shot noise of a high internal gain injection photon detector

Memiş¹,

Katsnelson²,

Kong³

et al. 2008

Opt. Express

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Nanoinjection Detectors and Imagers for Sensitive and Efficient Infrared Detection

Memiş¹,

Mohseni

2010

Information Optics and Photonics

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Recombination noise in semiconductor junction devices

Edwards

2004

IEE Proc., Circuits Devices Syst.

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The evolution of conceptual models of recombination noise generation in bipolar semiconductor junctions is explored with particular reference to recent developments in nonclassical light generation. This development is traced from the early work pioneered by van der Ziel through to recent work on sub-Poissonian light generation initiated by Yamamoto. This recent work has emphasised the importance of the driving impedance in suppressing recombination noise. It has helped to resolve several longstanding ambiguities and misunderstandings concerning the fundamentals of shot noise generation in laser diodes and light-emitting diodes, as well as in bipolar junction diodes and transistors, and allows a common conceptual approach to shot noise generation and propagation in photonic and electronic devices. Surprisingly, it also lends support to early suggestions by van der Ziel, subsequently regarded as erroneous by Buckingham and Faulkner, that bipolar junction shot noise does in fact originate in the transport of minority carriers across the depletion region of macroscopic junctions, although only in the limit of low injection.

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Sub-Poissonian Electronic and Photonic Noise Generation in Semiconductor Junctions

Cited by 7 publications

References 7 publications

Sub-Poissonian shot noise of a high internal gain injection photon detector

Sub-Poissonian shot noise of a high internal gain injection photon detector

Nanoinjection Detectors and Imagers for Sensitive and Efficient Infrared Detection

Recombination noise in semiconductor junction devices

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