Sub-nanosecond switching of a tantalum oxide memristor

Abstract

We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.

A family of memristor‐based reactance‐less oscillators

“…Figure 11 shows that the oscillation frequency increases linearly as the memristor constant increases. Very High oscillation frequencies can be achieved using recently introduced fast memristors [33][34][35]. However, slower memristors have their useful domain of applications as mentioned in Section 1.…”

“…However, the introduced concept is general and can be extended to higher frequencies given that technology advancement improves the response speed. For instance, memristors with fast sub-nanosecond switching time have recently been reported [33][34][35].…”

Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch

“…The tapered CPW structure acts as a transmission line with a nearly characteristic impedance of ∼50 from transient current measurements. 12 The cell consists of a top electrode (TE) of Pt(100 nm)/Cu(30 nm), a Ta 2 O 5 layer with a thickness of 15 nm, and a bottom electrode (BE) of Pt(20 nm)/Ti(5 nm) on a Si substrate covered with a 200-nm-thick SiO 2 layer. The Ta 2 O 5 layer was sputter-deposited from a polycrystalline Ta 2 O 5 target with an Ar and O 2 gas mixture.…”

“…Recently, Torrezan et al reported the observation of a switching time of ∼0.1 ns by fabricating a Pt/Ta 2 O 5 /Pt cell integrated into a coplanar waveguide (CPW) structure, in which the migration of oxygen vacancies is responsible for resistive switching. 12 The integration into a CPW structure a Author to whom correspondence should be addressed. Electronic mail: TSURUOKA.Tohru@nims.go.jp enables impedance matching between the measurement system and the cell.…”

Engineering nonlinearity into memristors for passive crossbar applications

“…32,37 These schemes share a common goal, i.e., increasing the nonlinearity or asymmetry of the current voltage (I-V) characteristic of the device, especially in the low resistance state. Among the resistance switches reported to date, TaO x -based devices have demonstrated encouraging electrical performance, including high endurance, 24,31 high switching speed, 38 low energy operation, 39,40 and forming-free. 40 However, these memristors normally exhibit a linear I-V relation in the low resistance state, 24,31 which limits their application in large crossbar arrays.…”