Sub-nanomolar detection of cesium with water-gated transistor

Alghamdi, Nawal; Alqahtani, Zahrah; Grell, Martin

doi:10.1063/1.5108730

Cited by 13 publications

(29 citation statements)

References 37 publications

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“…Chemically, the amorphous organic resin (cf. Figure 1 a) is very different to inorganic crystalline zeolites such as ‘mordenite’ and ‘clinoptilolite’ zeolite minerals we used previously for Cs + [ 5 ] and Pb 2+ /Cu 2+ [ 6 ] sensing respectively. However, they both exchange rather than accumulate ions, and we again found a response characteristic controlled by Equation (2) with very low c 1/2 and LoD.…”

Section: Introductionmentioning

confidence: 72%

“…We used source/drain (S/D) gold/chrome adhesion-layer contact substrates with channel geometry width/length = 1 mm/30 µm connected by a semiconducting film of electron-transporting tin dioxide (SnO 2 ) spray-pyrolysed from tin chloride solution, as described previously in [ 5 ]. Membranes, as described in Section 2.2 , were glued between two pools to separate them into two compartments.…”

Section: Experimental Procedures and Evaluationmentioning

confidence: 99%

“…The setup is illustrated in Figure 2 a. More details on the construction of the sample pools and the electric characterisation setup are given in [ 5 ] and references therein. After each measurement cycle, the sample pool was then emptied and re-filled with a different sample, usually with increasing salt concentration.…”

Section: Experimental Procedures and Evaluationmentioning

confidence: 99%

“…A similar characteristic applies to the classic potentiometric sensing of waterborne fluoride anions: Frant and Ross [ 4 ] reported electrodes constructed from LaF 3 giving a Nikolsky–Eisenman characteristic with c st ~1 µm and good selectivity for fluoride over other common anions. Alternatively, we have recently demonstrated WGTFT-based potentiometry using an ion exchange sorbent in the phase transfer membrane—the caesium-selective zeolite ‘mordenite’ [ 5 ], and the lead and copper-selective zeolite ‘clinoptilolite’ [ 6 ]. We found a membrane potential in response to increasing analyte concentration following a Langmuir or Langmuir–Freundlich isotherm (to be introduced below), instead of a Nikolsky–Eisenman law.…”

Section: Introductionmentioning

confidence: 99%

“…For the LF isotherm, c 1/2 = 1/ K , but c 1/2 can be read directly from measured characteristics without relying on a model. Note, for mordenite extracting Cs + , c 1/2 is very much smaller for membrane potential [ 5 ] than for mass extraction [ 19 ].…”

Section: Introductionmentioning

confidence: 99%

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Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing

et al. 2020

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We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes for water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading of a commercial macroporous aminophosphonic acid resin, PurometTM MTS9501, and were filled into a plasticised poly(vinyl chloride) (PVC) phase transfer membrane. We found a potentiometric response (membrane potential leading to WGTFT threshold shift) to fluoride following a Langmuir–Freundlich (LF) adsorption isotherm with saturated membrane potential up to ~480 mV, extremely low characteristic concentration c1/2 = 1/K, and picomolar limit of detection (LoD), even though ion exchange did not build up charge on the resin. La-loading gave a superior response compared to Al-loading. Membrane potential characteristics were distinctly different from charge accumulating sensitisers (e.g., organic macrocycles) but similar to the Cs+ (cation) selective ion-exchanging zeolite mineral ‘mordenite’. We propose a mechanism for the observed threshold shift and investigate interference from co-solutes. Strong interference from carbonate was brought under control by ‘diluting’ metal loading in the resin. This work sets a template for future studies using an entirely new ‘family’ of sensitisers in applications where very low limit of detection is essential such as for ions of arsenic, mercury, copper, palladium, and gold.

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Section: Introductionmentioning

confidence: 72%

Section: Experimental Procedures and Evaluationmentioning

confidence: 99%

Section: Experimental Procedures and Evaluationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing

et al. 2020

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Combining Aqueous Solution Processing and Printing for Fabrication of Flexible and Sustainable Tin Dioxide Ion‐Gated Transistors

Subramanian

Azimi

Santato

et al. 2021

Adv Materials Technologies

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to obtain high-performance crystalline films, these oxides are processed at high temperatures (>350 °C), which are not compatible with flexible electronics. [1a,4] Additionally, the brittle nature of crystalline metal oxides limits their applications in flexible electronics. [4a] SnO 2 is a promising metal oxide for electronics applications due to its abundance, electrical conductivity, and optical transparency, which make it interesting for thin-film transistors, gas sensors, and transparent electrodes. [5] SnO 2 films can be processed via several techniques, such as sputtering, evaporation, pulsed laser deposition, and various solution processing methods. [6] Among these, a single step, low temperature process in aqueous solution would meet the requirements for sustainable and cost-effective flexible electronics. [1a,7] Field effect transistors (FETs) based on SnO 2 films, deposited using physical and chemical methods, exhibited a high field-effect mobility (>100 cm 2 V −1 s −1 ) at an operating voltage below 5 V. [8] Sb-doped SnO 2 showed a mobility of ≈550 cm 2 V −1 s −1 , when the material was deposited by vaporliquid-solid growth, [8d] and ≈158 cm 2 V −1 s −1 , when radio frequency magnetron sputtering was used. [8e] The high mobility of SnO 2 is due to the large overlap of the spherical Sn 5s orbitals in the SnO 2 electronic structure. [8a,9] The charge carrier density (electrons) in SnO 2 can be tuned by creating oxygen vacancies (i.e. deviation of SnO 2 stoichiometry), by unintentional (i.e. impurities during the growth of SnO 2 ) and intentional doping (i.e. metallic dopants such as Ta, Sb on SnO 2 ). [10] By tuning the charge carrier density, the transistor mode of operation can be switched from enhancement to depletion mode. Ohta et al., fabricated FETs based SnO 2 films grown by pulsed laser deposition (400 °C) and investigated the electron transport properties at different thicknesses. The film thickness was found to affect the crystallinity and charge carrier concentration, as well as the performance and operation mode of the transistors. [11] Jang et al., deposited SnO 2 films by UV-ozone assisted solgel (300 °C), which were used as active layers in FETs on flexible polyimide substrates. [12] Lim et al., fabricated flexible SnO 2 FETs on polyethersulfone substrate by direct current reactive magnetron sputtering at room temperature, which did not show Ion-gated transistors (IGTs) are extensively used in chemo-and bio-sensors as well as intelligent sensors, that is, with neuromorphic computing functionality, exploiting their ion to electron convertibility. Metal oxides are attractive as active channel materials in IGTs because of their low-temperature solution processability, ambient stability, and tunable optoelectronic properties. SnO 2 is a low-cost material widely used in thin-film transistors, gas sensors, and transparent electrodes. In this work, films of crystalline SnO 2 nanorods are prepared on flexible substrates using a controlled aqueous growth technique, at 95 °C. The top ...

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