Sub-microsecond response time deep-ultraviolet photodetectors using α-Ga2O3 thin films grown via low-temperature atomic layer deposition

Lee, Seung Hyun; Lee, Kangmin; Kim, Young Bin; Moon, Yoon Jong; Kim, Soo Bin; Bae, Dae Kyung; Kim, Tae Jung; Kim, Young Dong; Kim, Sun Kyung; Lee, Sang Woon

doi:10.1016/j.jallcom.2018.11.333

Cited by 59 publications

(46 citation statements)

References 39 publications

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“…The devices' main characteristics are listed in Table 1, together with those from similar MSM device structures from the literature. [12] 0.007 (10V; 254 nm) 1020 30-68 Lee et al [22] 0.76 (20V; 253 nm) 0. The optical response of the devices recorded under 240 nm UV illumination and 10 V bias, is shown in Figure 4(a).…”

Section: Solar-blind Photodetector Devicesmentioning

confidence: 99%

Atomic layer deposited α-Ga₂O₃ solar-blind photodetectors

Moloney¹,

Tesh²,

Singh³

et al. 2019

J. Phys. D: Appl. Phys.

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Low temperature atomic layer deposition was used to deposit α-Ga2O3 films, which were subsequently annealed at various temperatures and atmospheres. The α-Ga2O3 phase is stable up to 400 o C, which is also the temperature that yields the most intense and sharpest reflection by X-ray diffraction. Upon annealing at 450 o C and above, the material gradually turns into the more thermodynamically stable ε or β phase. The suitability of the materials for solar-blind photodetector applications has been demonstrated with the best responsivity achieved being 1.2 A/W under 240 nm illumination and 10 V bias, for the sample annealed at 400 o C in argon. It is worth noting however that the device performance strongly depends on the annealing conditions, with the device annealed in forming gas behaving poorly. Given that the tested devices have similar microstructure, the discrepancies in device performance are attributed to hydrogen impurities.

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Section: Solar-blind Photodetector Devicesmentioning

confidence: 99%

Atomic layer deposited α-Ga₂O₃ solar-blind photodetectors

Moloney¹,

Tesh²,

Singh³

et al. 2019

J. Phys. D: Appl. Phys.

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“…A rise time (a time required to a photocurrent change from 10 to 90% of saturated photocurrent under DUV illumination) was estimated to 1.31 μs which is fast among recently‐developed DUV photodetectors, suggesting that β‐Ga 2 O 3 thin film can be a potential candidate in the DUV detection (Figure 3(d)). 17 The epitaxial α‐Ga 2 O 3 film exhibited a rise time of 539 ns in the previous report 10 . The rise time using the α‐Ga 2 O 3 film showed a slightly faster response speed than that using poly‐crystalline β‐Ga 2 O 3 film, which may originate from a better crystalline quality.…”

Section: Resultsmentioning

confidence: 68%

“…The DUV detection performance using α‐Ga 2 O 3 thin film was reported previously 10 . Here, the β‐Ga 2 O 3 film was investigated to evaluate the DUV detection performance.…”

Section: Resultsmentioning

confidence: 86%

“…A peak from α‐Ga 2 O 3 phase at 2theta near 40° is negligible while a peak from β‐Ga 2 O 3 is observed in Figure 2(a). It was reported that α‐Ga 2 O 3 thin film was grown on the sapphire substrate because the sapphire crystal structure is identical with that of α‐Ga 2 O 3 10 . However, the lattice matched growth behavior of α‐Ga 2 O 3 film was interrupted which may be caused by remaining physisorbed Ga precursor or byproduct on the sapphire surface.…”

Section: Resultsmentioning

confidence: 99%

“…There are several polymorphs of Ga 2 O 3 such as α‐, β‐, γ‐, δ‐, and ε‐Ga 2 O 3 9 . Among the various polymorphs of Ga 2 O 3 , α‐phase Ga 2 O 3 thin films were grown successfully on sapphire substrates using atomic layer deposition (ALD) by our group, recently 10 . ALD is mass production‐compatible process in semiconductor industry which is a state‐of‐the‐art thin film deposition technology 11,12 .…”

Section: Introductionmentioning

confidence: 99%

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Influences of Process Temperature on a Phase of Ga₂O₃ Thin Films Grown by Atomic Layer Deposition on Sapphire

Lee

Woon

2020

Bulletin Korean Chem Soc

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Influences of process temperature on the phase of Ga 2 O 3 thin films grown by atomic layer deposition (ALD) on a sapphire substrate is investigated. Ga 2 O 3 thin films grown by ALD at a process temperature of 200 C showed an amorphous phase; however, crystalline α-Ga 2 O 3 film was deposited at the deposition temperatures from 225 to 250 C. Above a process temperature of 300 C, α and β phases coexist in the grown Ga 2 O 3 thin film. Interestingly, β-Ga 2 O 3 thin film was deposited on the sapphire by an increase of working pressure during Ga 2 O 3 ALD process at the process temperature of 300 C. The bandgap of β-Ga 2 O 3 thin film was as high as~5.2 eV. A metal-semiconductor-metal type photodetector using the β-Ga 2 O 3 thin film exhibited a fast response speed with a short rise time of 1.3 μs for the detection of deep ultraviolet wavelengths.

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Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Kim

Sung

Jeon

et al. 2022

Adv Materials Technologies

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Dynamic random access memories (DRAMs) are currently used as the core memory in computing systems because of their high speed and density. Their demand should continue to grow owing to increased data usage. A unit cell in a DRAM consists of one transistor and one capacitor, and the data are stored in the capacitor. As the size of the unit cell decreases to improve the memory density by aggressive scaling, it is important to secure sufficient capacitance in the capacitor. In this regard, technological advances in the fabrication of capacitors are of great importance; accordingly, the materials and processing of high‐k thin films require developmental innovations. Besides, it is necessary to develop electrode materials that optimize the function of high‐k thin films. In this review, recent advances in achieving sufficient capacitance in DRAM capacitors are summarized from structural and material/process perspectives, and the future direction of DRAM capacitor development is discussed. Atomic layer deposition (ALD) is a key technique that enables the growth of functional thin films for DRAM capacitors; thus, recent advances in the deposition of high‐k and electrode thin films grown using the ALD technique are addressed.

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Sub-microsecond response time deep-ultraviolet photodetectors using α-Ga2O3 thin films grown via low-temperature atomic layer deposition

Cited by 59 publications

References 39 publications

Atomic layer deposited α-Ga₂O₃ solar-blind photodetectors

Atomic layer deposited α-Ga₂O₃ solar-blind photodetectors

Influences of Process Temperature on a Phase of Ga₂O₃ Thin Films Grown by Atomic Layer Deposition on Sapphire

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

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Sub-microsecond response time deep-ultraviolet photodetectors using α-Ga2O3 thin films grown via low-temperature atomic layer deposition

Cited by 59 publications

References 39 publications

Atomic layer deposited α-Ga2O3 solar-blind photodetectors

Atomic layer deposited α-Ga2O3 solar-blind photodetectors

Influences of Process Temperature on a Phase of Ga2O3 Thin Films Grown by Atomic Layer Deposition on Sapphire

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Contact Info

Product

Resources

About

Atomic layer deposited α-Ga₂O₃ solar-blind photodetectors

Atomic layer deposited α-Ga₂O₃ solar-blind photodetectors

Influences of Process Temperature on a Phase of Ga₂O₃ Thin Films Grown by Atomic Layer Deposition on Sapphire