Sub-micron lines patterning into silica using water developable chitosan bioresist films for eco-friendly positive tone e-beam and UV lithography

Caillau, Mathieu; Chevalier, Céline; Cremillieu, Pierre; Delair, Thierry; Soppera, Olivier; Leuschel, Benjamin; Ray, C.; Moulin, Christophe; Jonin, Christian; Bénichou, Emmanuel; Brevet, Pierre‐François; Yeromonahos, Christelle; Laurenceau, Emmanuelle; Chevolot, Yann; Leclercq, Jean‐Louis

doi:10.1117/12.2292312

Cited by 3 publications

(2 citation statements)

References 42 publications

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“…It was shown recently that chitosan and chitosan salts can be used without chemical modification as a positive resist for 248 nm or e-beam lithography. − In this paper, we show that we can achieve photopatterning of raw chitosan at 193 nm and that the patterned chitosan is suitable for dry etching and can be transferred into silica by dry etching. In this frame, chitosan appears thus as an ideal candidate for replacing commercial synthetic resists, as it does not need additional modifications, and development of patterns can be achieved with water or a slightly acidified solution after 193 nm irradiation.…”

Section: Introductionmentioning

confidence: 68%

Chitosan as a Water-Developable 193 nm Photoresist for Green Photolithography

Sysova

Durin

Gablin

et al. 2022

ACS Appl. Polym. Mater.

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The development of environmentally friendly materials and processes is a major issue that concerns all industrial sectors, including microelectronics. The aim of this study is to demonstrate the possibility of using chitosan-based photoresists for microelectronic applications on silicon by 193 nm photolithography. The photopatterning of chitosan films is demonstrated and analyzed by different spectroscopy and microscopy techniques. In particular, it is shown that 193 nm irradiation allows one to induce chain breaks that modify the solubility of chitosan in an aqueous developing solution, without denaturing the chitosan macromolecule chains. This mechanism allows one to obtain patterns, and it is shown that these patterns can be transferred by physical etching into silica. It is also demonstrated that the formulated resins are compatible with industrial spin-coating and exposure tools, which opens very interesting perspectives for these chitosan-based positive resins in a microelectronic context.

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Section: Introductionmentioning

confidence: 68%

Chitosan as a Water-Developable 193 nm Photoresist for Green Photolithography

Sysova

Durin

Gablin

et al. 2022

ACS Appl. Polym. Mater.

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“…За останні роки було проведено експерименти, в ході яких було виготовлено мікроструктури на ПММА (класичний матеріал для літографії) та хітозані -новому матеріалі для протонної літографії. Хітозан -матеріал, який отримується з хітину (відходу харчової промисловості), який вже було успішно використано в ультрафіолетовій та електронній літографії [12]. В ІПФ НАН України було вперше в світі проведено пілотні експерименти з протонної літографії по плівках хітозану [13].…”

Section: переваги протонної літографії та світовий досвідunclassified

Proton beam writing: World experience and prospectives in Ukraine

Polozhii¹,

Ponomarev²,

Kolinko³

et al. 2023

Nucl. Phys. At. Energy

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Proton beam writing is a promising lithography method that is being developed in many countries. This method has significant advantages over other lithography methods, amongst all, there is the absence of the need for prefabricated pattern masks and a high aspect ratio of fabricated structures. Numerous publications demonstrate prospective applications of proton beam writing in different fields related to micro- and nanostructures fabrication. Proton beam writing may be used both for nanoelectronics and three-dimensional microstructures with a high aspect ratio. Work on proton beam writing technology is being conducted at the Institute of Applied Physics of the National Academy of Sciences of Ukraine. Last years there were introduced vector proton beam writing method, an electrostatic blanker system for proton beam distortion, and experiments on proton beam writing on chitosan films were conducted, including the films covered with thin films of metals and metal compounds.

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