2010
DOI: 10.1016/j.physleta.2009.11.019
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Sub-coercive field dynamic hysteresis in morphotropic phase boundary composition of Pb(Zr1/2Ti1/2)O3–Pb(Zn1/3Nb2/3)O3 ceramic and its scaling behavior

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Cited by 24 publications
(15 citation statements)
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“…Since the value of exponent n is the measure of ability of domains in following the electric field direction, lower value indicates poor ability of irreversible domains in this respect. 21 As a consequence, the lower value of n leads to lower hysteresis area as well as lower value of remnant polarization. 16 Also the near linear dependence of ͗A͘ to electric field also suggests occurrence of concurrent nucleation and domain boundary motion, phenomena very well known in KNbO 3 and BaTiO 3 .…”
Section: -2mentioning
confidence: 99%
See 1 more Smart Citation
“…Since the value of exponent n is the measure of ability of domains in following the electric field direction, lower value indicates poor ability of irreversible domains in this respect. 21 As a consequence, the lower value of n leads to lower hysteresis area as well as lower value of remnant polarization. 16 Also the near linear dependence of ͗A͘ to electric field also suggests occurrence of concurrent nucleation and domain boundary motion, phenomena very well known in KNbO 3 and BaTiO 3 .…”
Section: -2mentioning
confidence: 99%
“…20 Higher value of n means sharper response of domains and hence higher value of polarization. 21 Ferroelectric loops were obtained for electric fields varying from 10 to 54 kV/cm while frequency range covered during measurement was 2-200 Hz. Figures 2͑a͒ and 2͑b͒ show the ferroelectric loops obtained at different f but fixed E o ͑54 kV/cm͒ and different E o but fixed frequency ͑f =2 Hz͒.…”
mentioning
confidence: 99%
“…These values are comparable with those previously reported for PZT-PZN films. [33][34][35][36][37] The dielectric constant and polarization values for the stack with poly-Si are indicative of 24% improvement compared with the values obtained for the stack without poly-Si. The improvement in the dielectric constant is attributed to reduction of the number of nucleation sites as a result of the poly-Si.…”
Section: Resultsmentioning
confidence: 74%
“…By plotting ͗A͘ against f at fixed E 0 , one obtains the exponent m. The exponent n can be obtained by plotting ͗A͘ against E 0 at fixed f. 11 This method can be repeated for all the cases studied here to extract the magnitude of exponent m and n. After obtaining f-exponent m and E 0 -exponent n, the scaling of hysteresis area ͗A͘ against frequency f and field amplitude E 0 can be obtained as shown in Figs. 8͑a͒-8͑d͒.…”
Section: Dynamic Scaling Relationshipsmentioning
confidence: 99%
“…[8][9][10] Dynamic hysteresis model provides the changes in hysteresis area ͗A͘, coercive field ͑E c ͒, and remnant polarization ͑P r ͒ as function of amplitude of applied field ͑E o ͒ and frequency ͑f͒. 11 We synthesized bilayer and trilayer ferroelectric graded structures with following variations: ͑i͒ single layer thick film of pure BaTiO 3 ͑BT͒ with thickness of 1 mm, ͑ii͒ bilayer structure with equal layer thickness of 0.5 mm for BT and 0.975BaTiO 3 -0.025Ba͑Cu 1/3 Nb 2/3 ͒O 3 ͑BTBCN͒, ͑iii͒ bilayer structure with unequal thickness of 0.650 mm for BT and 0.350 mm for BTBCN, and ͑iv͒ trilayer structure with 0.40 mm layer of BT sandwiched between two layers of BTBCN with thickness of 0.30 mm. All these structures are schematically shown in Fig.…”
Section: Introductionmentioning
confidence: 99%