Abstract:The gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability compared to that of the conventional FinFET architecture. The significantly higher electron mobility of indium phosphide (InP) NW than that of silicon NW makes it particularly well-suited for high-performance (HP) electronic applications. In this work, we perform an ab initio quantum transport simulation to investigate the performance limit of sub-5 nm gate length (L… Show more
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