Abstract:In this paper, we have systematically investigated the factors for performance enhancement on sub-32nm CMOS technology. We report that PMOS gains the drive current by slim spacer, S/D silicide resistance reduction by e-SiGe, and compressive CESL. The three factors improve the PMOS performance by 7%, 10% and 25% respectively. Combined with the three factors can gain the device drive current 30%. In addition, the optimized integration scheme can reduce NMOS extension resistance. The main cause is that post e-SiG… Show more
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