Sub-20nm tip-to-tip enabled by anti-spacer patterning

Abstract

Alternative patterning solutions, such as litho-freeze-litho-etch (LFLE) and spacer-based pitch splitting, have been a cornerstone of advanced technology nodes to enable device scaling. The greatest utility comes from the ability to self-align a pitch splitting process; however, traditional spacer-based patterning techniques require the deposition and etch of multiple materials, which reduce throughput and increase manufacturing costs. Anti-spacer technology, on the other hand, enables both self-aligned pitch splitting and high throughput via a single pass track-based process. Here, we present the utility of combining a 193 nm immersion anti-spacer process with LFLE to enable the formation of sub-20 nm slot contact features for a minimum tip-to-tip cut, with a scaling path to achieve sub-12 nm cuts.