Sub-10µm Pitch Hybrid Direct Bond Interconnect Development for Die-to-Die Hybridization

Mudrick, John; Sierra-Suarez, Jonatan A.; Jordan, Matthew B.; Friedmann, Thomas A.; Jarecki, Robert; Henry, Michael David

doi:10.1109/ectc.2019.00103

Cited by 12 publications

(6 citation statements)

References 13 publications

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“…From the literature, two types of process/integrations are brought out: 'via + pad' [17][18][19][20] vs "pad only." 12,13,21,22 Copper is always used at the bonding level, i.e., bonding pads, but the metal layers connected to the HB module can be of two types: Cu 13,[18][19][20][21] or Al. 12,17,22 What are the consequences in terms of reliability issues?…”

Section: Hybrid Bonding Module and Process/integrationmentioning

confidence: 99%

Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements

Moreau

Jourdon

Lhostis

et al. 2022

ECS J. Solid State Sci. Technol.

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This paper reviews the most significant qualification and reliability achievements obtained, over the last 6 years, by the scientific community for hybrid bonding-based interconnects (HB) also called Cu-Cu or Cu/SiO2 bonding. First, the definition of words qualification, robustness and reliability are given to avoid misunderstanding about the published results. Second, the five potential threats (moisture ingress, thermomechanical stresses,electromigration, Cu diffusion, dielectric breakdown) are presented. Finally, the publications of six industrials or research and technology organizations are summarized and discussed. Most of the published data are related to qualification results (pass or fail). Few studies published in-depth studies, mainly on electromigration (Black’s parameters extraction and failure analysis) and copper diffusion (electrical and analytical characterizations). To conclude, once the manufacturing issues (surface preparation, alignment…) have been solved, this technology is robust and reliable at pitches > 1 μm as it reacts, roughly, like a conventional back-end of line (BEoL) interconnect.

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Section: Hybrid Bonding Module and Process/integrationmentioning

confidence: 99%

Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements

Moreau

Jourdon

Lhostis

et al. 2022

ECS J. Solid State Sci. Technol.

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“…In the past, with the miniaturization of solder joints, various reliability issues have arisen, such as side wetting and bridge failure [6,7]. To address these concerns, the hybrid bonding technique was proposed [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Cu Film Thickness on Cu Bonding Quality and Bonding Mechanism

Lu,

Hsu,

Hsu

et al. 2024

Materials

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In the hybrid bonding process, the final stage of chemical mechanical polishing plays a critical role. It is essential to ensure that the copper surface is recessed slightly from the oxide surface. However, this recess can lead to the occurrence of interfacial voids between the bonded copper interfaces. To examine the effects of copper film thickness on bonding quality and bonding mechanisms in this study, artificial voids were intentionally introduced at the bonded interfaces at temperatures of 250 °C and 300 °C. The results revealed that as the thickness of the copper film increases, there is an increase in the bonding fraction and a decrease in the void fraction. The variations in void height with different copper film thicknesses were influenced by the bonding mechanism and bonding fraction.

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“…However, issues such as side wetting and bridge failure were encountered as the solder joints were scaled down [7,8]. These problems were overcome by hybrid bonding technology, which not only provides ultra-small joints and ultra-fine pitch, achieving a high number of inputs/outputs (I/Os) [9][10][11], but also has almost no thickness limitation [12,13]. This technology can significantly reduce the overall thickness in future 3D packaging, enabling the stacking of a large number of chips.…”

Section: Introductionmentioning

confidence: 99%

Effect of Compressive Stress on Copper Bonding Quality and Bonding Mechanisms in Advanced Packaging

Lu,

Lee,

2024

Materials

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The thermal expansion behavior of Cu plays a critical role in the bonding mechanism of Cu/SiO2 hybrid joints. In this study, artificial voids, which were observed to evolve using a focused ion beam, were introduced at the bonded interfaces to investigate the influence of compressive stress on bonding quality and mechanisms at elevated temperatures of 250 °C and 300 °C. The evolution of interfacial voids serves as a key indicator for assessing bonding quality. We quantified the bonding fraction and void fraction to characterize the bonding interface and found a notable increase in the bonding fraction and a corresponding decrease in the void fraction with increasing compressive stress levels. This is primarily attributed to the Cu film exhibiting greater creep/elastic deformation under higher compressive stress conditions. Furthermore, these experimental findings are supported by the surface diffusion creep model. Therefore, our study confirms that compressive stress affects the Cu–Cu bonding interface, emphasizing the need to consider the depth of Cu joints during process design.

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Sub-10µm Pitch Hybrid Direct Bond Interconnect Development for Die-to-Die Hybridization

Cited by 12 publications

References 13 publications

Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements

Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements

Effect of Cu Film Thickness on Cu Bonding Quality and Bonding Mechanism

Effect of Compressive Stress on Copper Bonding Quality and Bonding Mechanisms in Advanced Packaging

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