Sub-10 pA/V Transconductance Amplifier Using 0.9 V, 32 nm Carbon Nanotube Field Effect Transistor

Tripathi, S. K.; Joshi, Amit M.

doi:10.1142/s021812662220002x

Cited by 2 publications

(3 citation statements)

References 7 publications

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“…Considering the characteristics of the OTA, the output current expression may be expressed as follows: (10). If R 1 � R 2 � R, R 3 � 2R and putting the value of V Z1 and V Z2 , we fnd (11) and (12).…”

Section: Circuit Description Figure 3 Illustrates the Suggested Digit...mentioning

confidence: 99%

“…Tis study aims to investigate the design and analysis of digitally tunable transconductance amplifers (DTTAs) that take advantage of the capabilities of CNTFETs. Te major goal is to use CNTFET intrinsic features to improve circuit performance including gain, power efciency, bandwidth, and linearity [13,14]. Te amplifer's properties may be dynamically modifed to accommodate diferent operating needs by including digital tuning mechanisms, signifcantly broadening the area of its use [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…As an alternative, integrating CNTFETs provides a convincing solution to these restrictions. CNTFETs' outstanding electron mobility, resilience, and nanoscale dimensions enable circuit designers to push the performance envelope [ 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

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Design and Analysis of Digitally Tunable Transconductance Amplifier (DTTA) Using CNTFETs

Tripathi,

Hussain,

Kumar

et al. 2024

The Scientific World Journal

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Carbon nanotube-FETs (CNTFETs) have become a potential challenger because of their exceptional electrical properties and compatibility with conventional CMOS technology. The design and study of digitally tunable transconductance amplifiers (DTTAs) using CNTFETs are the main topics of this work. By utilizing the special characteristics of CNTFETs, the suggested DTTA design makes transconductance tunable, providing a versatile method of adjusting amplifier settings without requiring modifications to the hardware architecture. This study provides a complete description of the CNTFET modeling techniques utilized for realistic circuit simulations, along with a detailed analysis of the DTTA based on CNTFETs. The circuit is implemented using a 32 nm CNTFET model and verified results with HSPICE.

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Section: Circuit Description Figure 3 Illustrates the Suggested Digit...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design and Analysis of Digitally Tunable Transconductance Amplifier (DTTA) Using CNTFETs

Tripathi,

Hussain,

Kumar

et al. 2024

The Scientific World Journal

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Compact K-Band Current Mode Tunable Active Only Bandpass Filter Using 32 nm CNTFET-Based MOCCCII

Mirnezami,

Dousti,

Dolatshahi

2024

J CIRCUIT SYST COMP

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A low-power and compact carbon nanotube field-effect transistor (CNTFET)-based [Formula: see text]-band electronically tunable band-pass filter (BPF) is presented. The filter is designed using second-generation multiple-output current-controlled current conveyor (MOCCCII). The presented active only current-mode BPF employs three MOCCCIIs and two CNTFETs as capacitors. This BPF can be tuned by varying the parasitic resistance of MOCCCIIs via the control current. The designed current-mode tunable BPF is simulated in an advanced design system (ADS) using the Stanford CNTFET model with the extension of noise and manufacturing process variation. The filter achieves a 21–23[Formula: see text]GHz tuning frequency range, with a minimum noise figure of about 11.09[Formula: see text]dB. The 1-dB compression point and input-referenced third-order intercept point are −19.28 and −8.4[Formula: see text]dBm, respectively. This compact filter consumes only 145.7[Formula: see text][Formula: see text][Formula: see text]W power at ± 0.5[Formula: see text]V supply voltage at room temperature. The temperature analysis shows good thermal stability. The Monte Carlo analysis demonstrates the good process variation stability of the filter. The suggested BPF can be thought of as the first fully active BPF that is a candidate for [Formula: see text]-band communication applications with future advances in the fabrication process for CNTFET.

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Sub-10 pA/V Transconductance Amplifier Using 0.9 V, 32 nm Carbon Nanotube Field Effect Transistor

Cited by 2 publications

References 7 publications

Design and Analysis of Digitally Tunable Transconductance Amplifier (DTTA) Using CNTFETs

Design and Analysis of Digitally Tunable Transconductance Amplifier (DTTA) Using CNTFETs

Compact K-Band Current Mode Tunable Active Only Bandpass Filter Using 32 nm CNTFET-Based MOCCCII

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