Sub-0.3 volt amorphous metal WNx based NEMS switch with 8 trillion cycles

Abstract

Introduction: The mechanical nature of nanoelectromechanical (NEM) switches makes them sluggish yet desirable for ultra-low-power, harsh environment applications. Two- and three-terminal NEM switches have been demonstrated using onedimensional, two-dimensional, and thin films, but sub-0.3 V operation with improved mechanical and electrical reliability is still elusive.Method: This study presents WNxnano-ribbon-based NEM sensor switches that operate at 0.6 V, 30 nanosecond switching time, 8 trillion cycles, and 0.5 mA ON current with less than 5 kΩ ON resistance, without stiction, mechanical welding, or short circuits. WNx’s high Young’s modulus gives it great elasticity and mechanical restoring force, which may overcome van der Waal and capillary forces.Results and Discussion: With its high Young’s modulus, the device’s nanoscale size facilitated low operating voltage. WNxnano-ribbon without grain boundaries is amorphous and more mechanically strong. Hammering and high current flow may destroy the nano-ribbon contact surface and interface, which is practically immaculate. Pull-out time (dominant delay factor) is 0 owing to high Young’s modulus, hence hysteresis loss and delay are absent. Elasticity and Young’s modulus increase speed.

Lorentz Force-Actuated Bidirectional Nanoelectromechanical Switch with an Ultralow Operation Voltage

“…Electronic switching logic and memory units that can operate under harsh environments, such as intense radiative exposure and at high temperatures, are particularly important for nuclear emergency rescue, outer space missions, and critical industrial/battlefield operations. , This is because, as schematically depicted in Figure a, the conventional c-Si field effect transistor (FET) logic devices are prone to deteriorating or malfunctioning due to the radiation damage that accumulates in the gate dielectric , or to the thermal carrier breakdown happening at temperatures of >250 °C for c-Si logic devices . In comparison, nanoelectromechanical (NEM) switches − rely on straightforward touching and detaching of electrodes to control the current flow and logic states, thus exempting the use of any dielectric layer and semiconducting channel materials. In this way, excellent switching performance can be accomplished, with a quasi-zero leakage current, an extremely steep subthreshold slope (SS), and an extremely high current on/off ( I on / I off ) ratio, even in high-temperature and hard radiation environments. − …”