Studying the Influence of Temperature on Photoelectric Processes in Silicon Solar Cells Using Digital Simulation

Abstract

the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p- n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platin um nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo -electric parameters of solar cells for various values of temperature are defined