Studying the Influence of n-Type Strained (111) Silicon on the Piezoresistive Coefficients

Balbola, Amr A.; Kayed, Mohammed O.; Moussa, Walied A.

doi:10.1109/jsen.2016.2616759

Cited by 12 publications

(7 citation statements)

References 26 publications

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“…Different concentration approach was utilized to fabricate two groups 1 shows a schematic of the eight-element rosette oriented over the (111) silicon plane. It is reported that the biaxial tensile strain on (111) silicon plane enlarges the shear PRC of the n-type piezoresistors oriented on the same plane, thus improves the sensitivity to the out-of-plane stress measurement using n-type piezoresistors [21]. The out-ofplane normal stress gauge factor (GF) of the 3D chip is higher than that of the foil strain gauge.…”

Section: The N-type Eight-element Stress/strain Rosette With Temperat...mentioning

confidence: 99%

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Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Kayed

Balbola

Lou

et al. 2021

J. Micromech. Microeng.

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This paper presents the microfabrication and testing of a membrane-free eight-element single-polarity (n-type) sensing rosette integrated with strained silicon technology over (111) silicon plane to measure the full 3D stress/strain tensor with full temperature compensation. Such n-type piezoresistive (PR) sensor has low sensitivity to the out-of-plane components compared to the in-plane components. To improve the sensitivity of such sensors to the out-of-plane components, a strained silicon technique was integrated into the sensing rosette during the microfabrication process using a highly compressive film produced by plasma enhanced chemical vapor deposition silicon nitride. For experimental verification, a prototype device featuring the proposed sensing rosette was microfabricated using semiconductors fabrication processes. The experimental analysis applied both, in-plane and out-of-plane stresses at different temperatures over a range from −20 °С to 60 °С. In this work, a smart sensing calibration algorithm, utilizing machine learning, is employed to reduce the temperature impact on both sensitivity and resistance of PR coefficients during stress measurement. The developed sensor is capable of accurately extracting the applied stress/strain components with temperature compensation.

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Section: The N-type Eight-element Stress/strain Rosette With Temperat...mentioning

confidence: 99%

“…Alternatively, strain technology can be employed to provide dissimilar PR coefficients, hence a set of linearly independent equations [20] that can be solved for the temperature-compensated six stress components. Moreover, the biaxial strain could improve the out-ofplane normal stress sensitivity of PR based stress sensors by 30% [21].…”

Section: Introductionmentioning

confidence: 99%

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Kayed

Balbola

Lou

et al. 2021

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…The typical calibration results would be used to calculate the piezoresistive coefficients. This test was carried out using a four-point bending (4PB) setup, environmental chamber, and hydrostatic test [21]. Applying known uniaxial stress on the current fabricated sensing chip will give B 1 and B 2 directly, while hydrostatic load will measure B 3 .…”

Section: Microfabricationmentioning

confidence: 99%

“…Hence, strain would have a tremendous impact on the piezoresistive based sensing rosette. For instance, strain engineering could improve the sensitivity of piezoresistive based stress sensors by 30 percent [21]. In this work, a biaxial and transverse strain will be produced and integrated with a piezoresistive sensing rosette, which will allow for quantifying the effect of strain on the piezoresistive coefficients.…”

Section: Introductionmentioning

confidence: 99%

Design, Fabrication, And Calibration Of A Mems Based Sensing Rosette For Quantifying The Influence Of Strain Engineering On The Piezoresistive Coefficients

Balbola¹,

Moussa²

2018

Progress in Canadian Mechanical Engineering

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Strain has been used extensively in enhancing the electron mobility for high speed and low power transistors. As stretching the silicon atoms away beyond their normal atomic space has a significant influence on the carrier mobility. In this paper, to study the effect of strained silicon on piezoresistivity, the strained silicon will be integrated into a ten element sensing rosette, that utilizes the unique properties of crystalline silicon over the (111) plane to fully extract the six stress components in fully temperature compensated manner. Two chips were designed and fabricated, where the pre-strain state was induced onto the silicon substrate during microfabrication. In the first design, a highly compressive film (stressor layer) was utilized to globally produce a tensile strain at the front side of the substrate where the sensing elements were fabricated. While in the second design, the stressor layer was patterned in a way allowing for inducing both local tensile and compressive transverse uniaxial pre-strain onto the substrate. In another word, stressor strip with intrinsic compressive stress will cause a tensile pre-strain underneath it and compressive stress on both sides. This allows for applying different local strain using the same stressor rather than using nitride capping for tensile or silicon germanium for compressive as used on strained based transistors. To evaluate the effect of the pre-strain on the piezoresistive coefficients, uniaxial, thermal, and hydrostatic loading will be utilized to calibrate both designs.

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“…Therefore, it is related to the manufacturing process. Additionally, residual stress brought about by the process will also affect the piezoresistive coefficient of the silicon wafer [2]. For a long time, researchers have studied the piezoresistive coefficient through experimental measurement and theoretical calculation.…”

Section: Introductionmentioning

confidence: 99%

An In-Situ Tester for Extracting Piezoresistive Coefficients

Zhang

2023

Micromachines

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In this study, an electrostatic force-driven on-chip tester consisting of a mass with four guided cantilever beams was employed to extract the process-related bending stiffness and piezoresistive coefficient in-situ for the first time. The tester was manufactured using the standard bulk silicon piezoresistance process of Peking University, and was tested on-chip without additional handling. In order to reduce the deviation from process effects, the process-related bending stiffness was first extracted as an intermediate value, namely, 3590.74 N/m, which is 1.66% lower than the theoretical value. Then, the value was used to extract the piezoresistive coefficient using a finite element method (FEM) simulation. The extracted piezoresistive coefficient was 9.851 × 10−10 Pa−1, which essentially matched the average piezoresistive coefficient of the computational model based on the doping profile we first proposed. Compared with traditional extraction methods, such as the four-point bending method, this test method is on-chip, achieving automatic loading and precise control of the driving force, so it has high reliability and repeatability. Because the tester is manufactured together with the MEMS device, it has the potential to be used for process quality evaluation and monitoring on MEMS sensor production lines.

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Studying the Influence of n-Type Strained (111) Silicon on the Piezoresistive Coefficients

Cited by 12 publications

References 26 publications

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Design, Fabrication, And Calibration Of A Mems Based Sensing Rosette For Quantifying The Influence Of Strain Engineering On The Piezoresistive Coefficients

An In-Situ Tester for Extracting Piezoresistive Coefficients

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