Studying of Properties of Silicon Junctions with the Schottky Barrier Fabricated on the Base of Amorphous and Polycrystalline Various Metal Alloys

Pashayev, I. G.

doi:10.15407/ufm.13.04.397

Cited by 2 publications

(3 citation statements)

References 12 publications

(26 reference statements)

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“…In [9,10], the concept of the presence of potential wells during metal-semiconductor contact [8,11], semiconductor-semiconductor, filler-matrix (composites), etc., was , the capacitance-voltage characteristic in nonlinear resistors (varistors) based on ZnO is explained by the presence of potential barriers (pits) in them and a theoretical formula is derived for the dependence of the capacitance on the U/U 0 ratio:…”

Section: Resultsmentioning

confidence: 99%

“…Studies of the dependence C = f(U) are also not proposed in the literature in the proposed scale. The dependence of electric capacity on a constant voltage C = f(U) is noted in [6][7][8]. Capacity growth with an increase in the constant voltage is associated with an increase in the number of domains moments, which are oriented in the direction of the electric field.…”

Section: Introductionmentioning

confidence: 99%

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Dependence of an electric capacitance on the constant voltage C = f(U) in pure bentonite, composites and semiconductors

Khalilova

Hasanli

2019

Appl. Phys. A

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The present paper is devoted to studying the effect of dc voltage on the amount of electrical capacitance in pure bentonite, composites and semiconductors with different conductivity, as well as the dependence of electrical conductivity on the external field. The reason for the dependence of the capacitance on the DC voltage may be the presence of potential barriers in them and the dependence of the electrical conductivity (σ) on the applied voltage. In those samples where there is a large range of variation of σ, there are also large changes in electrical capacitance. The principle of a change in electrical conductivity, a change in the electrical capacitance is observed, can be successfully used in microelectronics, electrical engineering, etc. Created capacities parameters can changed in a wide range of voltage and temperature.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dependence of an electric capacitance on the constant voltage C = f(U) in pure bentonite, composites and semiconductors

Khalilova

Hasanli

2019

Appl. Phys. A

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“…Тем не менее, дисилициды молибдена и вольфрама используется в разработках запоминающих устройств и других элементов. Высота барьера Шоттки между этими металлами и кремнием относительно низкая (~ 0,55-0,67 эВ) [69], а наиболее легкоплавкая эвтектика согласно равновесной диаграмме состояния все же достаточно высокотемпературна, именно поэтому дисилицид молибдена представляет собой интерес в силовых приборах, где имеют место высокие температуры. Отмечу, что в задачи данного обзора не входило изложение и анализ свойств тонкопленочных силицидов как объектов электронных материалов, и эти вопросы мною не рассматривались.…”

Section: использование высокотемпературных силицидных материаловunclassified

High-Temperature Silicides: Properties and Application

Lytovchenko

2016

East Eur. J. Phys.

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The overview presents a historic retrospective and current state of research of structure, properties and application of hightemperature silicide materials in science and engineering. These materials, particularly construction and functional materials based on or involving silicide refractory metals, are a most important alternative class of materials which adequately complete with special alloys, intermetallic metals, and ceramics that are traditionally used at high (above 15000C) temperatures in oxidizing and other aggressiveenvironments. The paper analyzes the data available on constitutional diagrams, particularly on molybdenum-silicon and tungsten-silicon systems. Also, it shows differences in descriptions of diagrams given by different authors and considers some crystallochemical and physical properties of some high-temperature silicides. The paper reviews areas of application of high-temperature silicide materials of various types (layered and multiple-phase composites, consolidated powders, film structure, three-dimensional materials), and presents details of the challenges encountered in the process of creation and application of high-temperature protectingsilicide coatings, as well as possible ways to improve their performance. It is noted that lack of unified approach to presentation and correlation of research results as well as to description of real performance of materials is a substantial problem in creating new high-temperature silicide materials.

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Studying of Properties of Silicon Junctions with the Schottky Barrier Fabricated on the Base of Amorphous and Polycrystalline Various Metal Alloys

Cited by 2 publications

References 12 publications

Dependence of an electric capacitance on the constant voltage C = f(U) in pure bentonite, composites and semiconductors

Dependence of an electric capacitance on the constant voltage C = f(U) in pure bentonite, composites and semiconductors

High-Temperature Silicides: Properties and Application

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