Studying natural oxide on the surface of n-Si(111), n-Si(100), and p-Si(111) single crystal wafers by X-ray reflection spectroscopy

Filatova, E. O.; Sokolov, Andréy; Taracheva, E. Yu.; Багров, И. В.

doi:10.1134/s1063785009010210

Cited by 7 publications

(4 citation statements)

References 6 publications

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“…As suggested by Lucovsky et al 28,29 and others 30,31 both sample preparation and orientation are critical for defining the nature of the SiO 2 /Si interface, which in turn dictates the electrical properties of the interface+oxide. 28,29 Because earlier work on ultrathin Si oxides on Si focused on asgrown and annealed oxides, prepared thermally or by plasma treatment, 28,29,32 we first analyze the SiO 2 /Si interface, formed by piranha and NAOS treatments, for the highly doped (100) and (111) Si wafers that we use here.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Interface Electrostatics Dictates the Electron Transport via Bioelectronic Junctions

Garg

Raichlin

Bendikov

et al. 2018

ACS Appl. Mater. Interfaces

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Different batches of Si wafers with nominally the same specifications were found to respond differently to identical chemical surface treatments aimed at regrowing Si oxide on them. We found that the oxides produced on different batches of wafer differ electrically, thereby affecting solid-state electron transport (ETp) via protein films assembled on them. These results led to the another set of experiments, where we studied this phenomenon using two distinct chemical methods to regrow oxides on the same batch of Si wafers. We have characterized the surfaces of the regrown oxides and of monolayers of linker molecules that connect proteins with the oxides and examined ETp via ultrathin layers of the protein bacteriorhodopsin, assembled on them. Our results illustrate the crucial role of (near) surface charges on the substrate in defining the ETp characteristics across the proteins. This is expressed most strikingly in the observed current's temperature dependences, and we propose that these are governed by the electrostatic landscape at the electrode−protein interface rather than by intrinsic protein properties. This study's major finding, relevant to protein bioelectronics, is that protein−electrode coupling in junctions is a decisive factor in ETp across them. Hence,surface electrostatics can create a barrier that dominates charge transport and controls the transport mode across the junction. Our findings' wider importance lies in their relevance to hybrid junctions of Si with (polyelectrolyte) biomolecules, a likely direction for future bioelectronics. A remarkable corollary of presented results is that once an electron is injected into the protein, transport within the proteins is so efficient that it does not encounter a measurable barrier down to 160 K.

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Section: ■ Results and Discussionmentioning

confidence: 99%

“…This can be due to the fact that the SiO 2 /Si(111) interface is atomically sharp and in fact comprises a single monatomic layer, which contains Si atoms in the 4 possible positive oxidation states. 32 This explains the lower charges on APTMS for Si (111) (r ≈ 0.8) than for Si (100) (r ≈ 1−1.7).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Interface Electrostatics Dictates the Electron Transport via Bioelectronic Junctions

Garg

Raichlin

Bendikov

et al. 2018

ACS Appl. Mater. Interfaces

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“…Such assumptions have been repeatedly confirmed experimentally (see, e.g. [2]) for different Si plates with {111} and {100} surface orientation. However in the cited example and other works of this kind different objects were taken into regard and the question concerning uniformity of oxidation time and equivalence of other factors of importance for test objects remained untouched.…”

Section: Introductionmentioning

confidence: 85%

Natural oxide thickness measurements on the test silicon relief pitch structure

et al. 2013

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The study was performed on a test step relief structure of monocrystalline silicon. There was experimentally measured the thickness of the natural oxide on this structure consisting of a set of elements (protrusions) with a trapezoidal profile and 2.0 μm step size, upper base about 10 nm, height about 500 nm. The tilt angle of side face with respect to the lower base was 54.7°. The entire structure was covered with a natural oxide film that appeared at room temperature, the thickness of which is being measured using a transmission electron microscope with atomic resolution by the observed pattern in the direct mode resolution of the crystal structure. In order to calibrate the measurements a distance between {111} planes was used. It was shown experimentally, that in the area of this bottom the natural oxide thickness increases from 2.3 ± 0.2 nm in the middle of the bottom to 3.0 ± 0.2 nm and 4.5 ± 0.2 nm at the left and right edges of the bottom, respectively.

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“…This also makes EUVR suitable for quality control, able to monitor small variations of a nominal sample structure [2]. Spectral reflectance measurements in the near-edge region can provide additional information about the chemical state of the studied material and local coordination environment of its atoms [7][8][9], while multi-angle approach allows to determine the refractive index of the sample [10][11][12][13] with the possibility of depth profiling of the sample composition [14]. In this paper, analytic capabilities of the EUVR technique are demonstrated in application to structural and optical characterization of a 10 nm orthorhombic LaLuO 3 sample.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural characterization of orthorhombic LaLuO3 using extreme ultraviolet reflectometry

Tryus

Nikolaev²,

Makhotkin³

et al. 2019

Thin Solid Films

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Studying natural oxide on the surface of n-Si(111), n-Si(100), and p-Si(111) single crystal wafers by X-ray reflection spectroscopy

Cited by 7 publications

References 6 publications

Interface Electrostatics Dictates the Electron Transport via Bioelectronic Junctions

Interface Electrostatics Dictates the Electron Transport via Bioelectronic Junctions

Natural oxide thickness measurements on the test silicon relief pitch structure

Optical and structural characterization of orthorhombic LaLuO3 using extreme ultraviolet reflectometry

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