Studying diffusion in multilayer thin-film structures on silicon by the contact melting technique

Скворцов, А. А.; Orlov, A. M.; Muradov, V. E.

doi:10.1134/s1063785009070062

Cited by 10 publications

(32 citation statements)

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“… after the thermal diffusion. In other words, Equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12) yields the displacement between the K interface and the M interface because of RP 0 v = in accordance with the experimental results. The K effect is thus obtained as…”

Section: T Okinosupporting

confidence: 79%

“…The existence of a driving force affects diffusivity 0 D and the diffusivity D becomes a function of the independent variables t and r . In that case, Equation (2)(3)(4)(5)(6) gives the diffusion flux yielding…”

Section: Diffusion Equationmentioning

confidence: 99%

“…is also valid as discussed later in the self-diffusion theory. Using Equations (3)(4)(5) and (3)(4)(5)(6) for Equation (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20), the relation of ( ) ( )…”

Section: Correlation Of Diffusion Fluxes With Coordinate Systemsmentioning

confidence: 99%

“…In other words, the motion of diffusion particles corresponds to the well-known Brown movement satisfying the parabolic law [2] [3]. It is widely accepted that the Brown problem is a general term of investigating subjects in various science fields relevant to the Markov process, such as material science, information science, life science, and social science [4]- [9].…”

Section: Introductionmentioning

confidence: 99%

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Mathematical Physics in Diffusion Problems

Okino¹

2015

JMP

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Using the divergence theorem and the coordinate transformation theory for the general Fickian second law, fundamental diffusion problems are investigated. As a result, the new findings are obtained as follows. The unified diffusion theory is reasonably established, including a self-diffusion theory and an N (N ≥ 2) elements system interdiffusion one. The Fickian first law is incomplete without a constant diffusion flux corresponding to the Brown motion in the localized space. The cause of Kirkendall effect and the nonexistence of intrinsic diffusion concept are theoretically revealed. In the parabolic space, an elegant analytical method of the diffusion equation is mathematically established, including a nonlinear diffusion equation. From the Schrödinger equation and the diffusion equation, the universal expression of diffusivity proportional to the Planck constant is reasonably obtained. The material wave equation proposed by de Broglie is also derived in relation to the Brown motion. The fundamental diffusion theories discussed here will be highly useful as a standard theory for the basic study of actual interdiffusion problems such as an alloy, a compound semiconductor, a multilayer thin film, and a microstructure material.

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Section: T Okinosupporting

confidence: 79%

Section: Diffusion Equationmentioning

confidence: 99%

Section: Correlation Of Diffusion Fluxes With Coordinate Systemsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Mathematical Physics in Diffusion Problems

Okino¹

2015

JMP

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“…Thermal regimes in a thin metal film on a heat exchange sub strate were studied by measuring U(t) waveforms [8,9]. Monotonic growth of U(t) during relatively short times t after switching on the current pulse is related to heat ing of the metal film and determined by the regime of heat removal to the semiconductor substrate (Figs.…”

Section: Phase Transformations In Metallization Systems Under Conditimentioning

confidence: 99%

Phase transformations in metallization systems under conditions of nonstationary thermal action

Скворцов¹,

Каленков²,

Koryachko³

2014

Tech. Phys. Lett.

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In assessing the reliability of metallization systems, most researchers focus their attention on long term experiments under conditions of subcritical current densities and study degradation processes that are not related to the formation of fused zones [1,2]. How ever, increased electric powers and other severe work ing conditions (in particular, in high current electron ics) favor the degradation of metallization layers up to their fusion. Special investigations have been devoted to the development of methods for diagnostics of met allization systems [3][4][5], including their operation under high thermal loads leading to local phase transi tions [6,7].The present work was aimed at studying phase tran sitions in metallization systems under conditions of thermal impacts caused by rectangular current pulses with amplitude up to j = 8 × 10 10 A/m 2 and durations within τ i = 100-1000 μs.The experimental setup was analogous to that used in [8] and included a source of rectangular current pulses with amplitude of up to 60 A and durations up to 1 ms, a master oscillator, a digital storage oscillo scope, and a microscope (Metam R1) with "numeri cal" eye glass for determining the length of a fused zone. The measurements were performed on test sam ples with a metallization stripe (length, 3 mm; width, 75 μm; thickness, up to 5 μm) on a semiconductor substrate (Fig. 1, inset A).The main current carrying layer in test structures was made of aluminum, which is the main metal used for the metallization of semiconductors. The substrate was made of phosphorus doped (111) oriented silicon plate with a resistivity of 0.01 Ω cm covered with a 60 μm thick n type epilayer (15 Ω cm), which pre vents shunting of the metallization. Some substrates were covered by additional dielectric layers of silicon oxide (SiO 2 ) or silicon nitride (Si 3 N 4 ) (Fig. 1, inset B). The nitride layer was deposited via reaction of dichlo rosilane with ammonia at reduced pressure (~50 Pa) in a temperature interval of 700-900°C. The thermal oxide layer was grown in a temperature interval of 1150-1250°C by standard technology in a diffusion furnace filled with dry oxygen. Some samples were Abstract-First order phase transitions induced in aluminum metallization layers by the passage of single rectangular current pulses with amplitude up to 8 × 10 10 A/m 2 and durations within 100-1000 μs are consid ered. The formation of local fused zones and their subsequent migration during current passage have been experimentally studied. The main mechanisms of interphase boundary propagation due to heat evolution at the solid/liquid interface under conditions of nonstationary heating of the metal film are established. The velocity of liquid phase propagation (~25 m/s) along the metallization stripe has been determined in exper iment and a method of calculating the length of a fused zone upon the current pulse passage is proposed.

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Thermal shock and degradation of metallization systems on silicon

Скворцов

Koryachko

Glinskiy

2016

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Purpose The purpose of this study is to investigate the mechanisms of degradation of aluminum metallization under conditions of thermal shock caused by rectangular current pulses (amplitude j < 8 × 1010 A/m2, duration t < 800 μs). Design/methodology/approach The results were obtained using oscillography and optical microscopy and through the construction of an empirical model of the thermal degradation of metallization systems. Findings Initially, for the authors’ studies, they deduced an equation that associated the depth of melting with the parameters of a current pulse. Research limitations/implications The authors were able to observe effects only in systems with appropriate adhesion of the thin metal films. For the systems with bad adhesion, the main mechanisms of degradation were associated with the melting of the metal, the formation of melted drops (up to 20 mcm in size) and the movement of these drops along the electrical field due to the electrocapillary effect. Practical/implications The mechanisms the authors studied could only occur in high-power semiconductor devices. Originality/value The principal mechanism of melting of a metallization track is linked to the heat dissipation at the interface of solid and liquid phases under conditions of thermal shock. The authors estimated the mechanical stresses in subsurface layers of silicon in the proximity of a non-stationary thermal source. The authors’ results show that the mechanical stresses that are strong enough to form dislocations emerge with current flow with power measuring approximately 0.7 Pkr.

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Studying diffusion in multilayer thin-film structures on silicon by the contact melting technique

Cited by 10 publications

References 0 publications

Mathematical Physics in Diffusion Problems

Mathematical Physics in Diffusion Problems

Phase transformations in metallization systems under conditions of nonstationary thermal action

Thermal shock and degradation of metallization systems on silicon

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