2014
DOI: 10.1088/1748-0221/9/12/c12004
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Studying defects in the silicon lattice using CCDs

Abstract: JINST 9 C12004have enabled the investigation of not only the defect densities and the device-averaged trap parameters, but also the properties of individual lattice defects in the device, en route to actively predicting the impact of the radiation environment before launch. KEYWORDS: Radiation damage evaluation methods; Radiation damage to detector materials (solid state); Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with… Show more

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Cited by 10 publications
(11 citation statements)
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References 20 publications
(32 reference statements)
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“…However as shown by the dashed overlaid traces in Figure 4 a good fit is not possible at higher values of n which indicates that another mechanism is affecting the CTI which is not accounted for in Equation 2.2. The same initial non-linear feature for low numbers of transfers has been seen previously in testing for CCDs on the Euclid VIS instrument at longer integration times [12]. This effect is thought to be caused by the signal electrons in that region seeing a lower number of longeremission-time (slow) traps due to travelling through fewer unfilled slow traps; in general, the X-ray signal will travel through the number of slow traps between X-ray events (as once filled they can no longer trap charge).…”
Section: X-ray Ctisupporting
confidence: 75%
“…However as shown by the dashed overlaid traces in Figure 4 a good fit is not possible at higher values of n which indicates that another mechanism is affecting the CTI which is not accounted for in Equation 2.2. The same initial non-linear feature for low numbers of transfers has been seen previously in testing for CCDs on the Euclid VIS instrument at longer integration times [12]. This effect is thought to be caused by the signal electrons in that region seeing a lower number of longeremission-time (slow) traps due to travelling through fewer unfilled slow traps; in general, the X-ray signal will travel through the number of slow traps between X-ray events (as once filled they can no longer trap charge).…”
Section: X-ray Ctisupporting
confidence: 75%
“…These A-centers are deemed to be effective traps that have a detrimental impact upon device performance. 8,9 Therefore it is necessary to suppress their concentration and for this purpose numerous defect engineering strategies have been proposed.…”
Section: Introductionmentioning
confidence: 99%
“…The prior model implementation used a power law parameterization [4] to extrapolate packet volume at full capacity down to the packet size of interest. Trap species that have been experimentally verified to exist in the irradiated CCD201 [5] and their properties are summarized in Table 1. Each trap species has a proportionality constant, a, called the defect scaling factor, which defines its prevalence in the silicon lattice (i.e.…”
Section: Statistics Of Trap Capture and Releasementioning
confidence: 99%