Study thermodynamic assessment of the B-C and B-Si binary systems with swift heavy ions and high intense electron beam irradiation at the low temperature

Abstract

B4C and B6Si samples have been irradiated by using swift heavy ions and high intense electron beam. Ion irradiation of the samples was carried at the different electron fluences [Formula: see text], [Formula: see text] and [Formula: see text] cm[Formula: see text] ion/cm2, and energy of ions flux 167 MeV. Also, the samples were irradiated with high energy electron beams at the linear electronic accelerator at different electron fluencies up to [Formula: see text] cm[Formula: see text] and energy of electron beams 2.5 MeV and current density of electron beams [Formula: see text]s. The unirradiation and irradiation of the thermodynamic kinetics of samples at low-temperature change with a differential mechanism. In the DSC curves, at the low temperature for unirradiation and irradiation, boron carbide and boron silicide samples do not undergo phase transition. But at the [Formula: see text] K temperature range, the thermodynamic mechanism of ions and electron beam irradiation are very difficult and measuring the temperature of conductivity, thermal conductivity, calibration factor, specific heat capacity becomes more complicated.

Modeling and X-ray Analysis of Defect Nanoclusters Formation in B4C under Ion Irradiation

“…The change in the peak position can be due to the lattice disorder (lattice expansion) in the crystal structure and the stress introduced by the SHI irradiation ( Figure 1 b—Zone A) [ 49 , 50 , 51 ]. According to L. Desgranges et al [ 52 ], displacement of X-ray diffraction spectra was observed in a sample of B 4 C boron carbide irradiated with thermal neutrons.…”