2020
DOI: 10.1109/tps.2020.3023732
|View full text |Cite
|
Sign up to set email alerts
|

Study on Uniform Plasma Generation Mechanism of Electron Cyclotron Resonance Etching Reactor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
5
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
5
2

Relationship

1
6

Authors

Journals

citations
Cited by 11 publications
(5 citation statements)
references
References 18 publications
0
5
0
Order By: Relevance
“…Note that in the higher microwave power, density shows a peaked radial profile due to the strong power absorption underneath the quartz glass window (not shown). 3) Cases of the lower or the higher microwave power than the present one with a good uniform density profile will be discussed in a separate paper.…”
Section: Discussionmentioning
confidence: 86%
See 3 more Smart Citations
“…Note that in the higher microwave power, density shows a peaked radial profile due to the strong power absorption underneath the quartz glass window (not shown). 3) Cases of the lower or the higher microwave power than the present one with a good uniform density profile will be discussed in a separate paper.…”
Section: Discussionmentioning
confidence: 86%
“…To the inner wall of the reactor by the plasma can be minimized because the plasma generation region can be located away from the reactor wall. (4) Uniform plasma generation Uniform plasma generation can be achieved to the extent that can be used as a semiconductor manufacturing tool for large wafers such as a diameter of 300 mm because of microwave propagation characteristics as described elsewhere 3) and later in Sect. 3.4.…”
Section: (3) Low Wall Damagementioning
confidence: 99%
See 2 more Smart Citations
“…Significant effort and progress have been made to improve plasma models over the past few decades. A hybrid fluid-kinetic model that treats thermalized electrons as fluid while capturing the kinetic behavior of non-thermalized electrons and ions using a Monte Carlo collision (MCC) model has been successfully used for fundamental investigations and equipment design over a wide range of process conditions, such as two-dimensional inductively coupled plasma reactors [12][13][14], CCP [3,15,16], magnetically enhanced reactive ion etching [17,18], electron cyclotron resonance [19,20], and electron beam generated plasma [21]. It is thus the most popular and preferable tool for plasma system design due to its capabilities of handling comprehensive processing conditions, realistic plasma chemistry, and complicated but flexible geometry with moderate computational resources.…”
Section: Introductionmentioning
confidence: 99%