Abstract:Abstract:In this study, low-energy microwave annealing is used to fabricate ultra-shallow junctions for less than 20 nm IC node applications in a potential material: Germanium (Ge). Germanium is a new promising material and might replace silicon in the future. A novel microwave annealing technique with two steps for the solid phase epitaxial recrystallization (SPER) and phosphorus dopants activation was applied to Germanium. The purpose of the first step, microwave annealing of 1.2 kW for 75 s, is to re-grow t… Show more
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