Study on topographic images of Sn/Si(111)-(√3×√3)R30° surface by non-contact AFM

Yi, Insook; Sugimoto, Yoshiaki; Nishi, Ryuji; Morita, Seizo

doi:10.1016/j.susc.2006.05.016

Cited by 5 publications

(3 citation statements)

References 29 publications

(26 reference statements)

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“…19 Point defects disrupting the uniformity of the Si(111)-Sn-√3 × √3 reconstruction 20 include vacancies, the proposed Sb substitutional defect, or the well-established Si substitutional defect. 21,22 The Si defect can even be fabricated and erased with atomic force microscopy. 23 The Si(111)-Sn-√3 × √3 surface serves in our experiments as a substrate for the widely used D 4h symmetric copper phthalocyanine (CuPc).…”

Section: ■ Introductionmentioning

confidence: 99%

“…The conductivity of the surface can be altered thanks to a narrow Mott–Hubbard state at low temperatures (70 K) and the surface has also been predicted for possible superconductivity by doping with alkali metals . Point defects disrupting the uniformity of the Si(111)-Sn-√3 × √3 reconstruction include vacancies, the proposed Sb substitutional defect, or the well-established Si substitutional defect. , The Si defect can even be fabricated and erased with atomic force microscopy . The Si(111)-Sn-√3 × √3 surface serves in our experiments as a substrate for the widely used D 4 h symmetric copper phthalocyanine (CuPc).…”

Section: Introductionmentioning

confidence: 99%

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Role of Dangling Bond State Occupancy in Adsorption of Copper Phthalocyanine on Si(111)-Sn-√3 × √3

et al. 2019

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Interaction of organic molecules with solid surfaces reflects the local electronic structure of nonequivalent surface sites. The Si(111)-Sn-√3 × √3 surface with intrinsic defects offers dangling bonds with various electron occupancies. In this study, we report on the interaction of copper phthalocyanine with this surface studied with scanning tunneling microscopy and spectroscopy. Sn atoms in the adlayer contain unpaired electrons in their dangling bonds. The molecules are found to adsorb on Sb and Si substitutional defects instead of the homogenous Sn areas. The symmetry of the molecules is lowered or lost after adsorption, and we find substantial differences in the electronic structure of the molecules adsorbed on either type of defects. Furthermore, the molecules preferentially adsorb on double Si substitutional defects where they can switch between a static and a fuzzy state, for both of which a corresponding bonding model is proposed. Our study shows a pivotal role of substitutional defects in the reactivity of the Si(111)-Sn-√3 × √3 surface for the copper phthalocyanine molecules, which we attribute to local changes of electronic structure and discuss it in terms of dangling bond state occupancy.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Role of Dangling Bond State Occupancy in Adsorption of Copper Phthalocyanine on Si(111)-Sn-√3 × √3

et al. 2019

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“…On the other hand, atom species have been discriminated using the NC-AFM to detect small differences in tip-sample interactions on several semiconductor surfaces, such as Ge/ Si(111), 5,6) Sn/Si(111), 7) and Sn/Ge(111). 8) These studies were extended to manipulation at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Lateral Manipulation of Single Defect on Insulating Surface Using Noncontact Atomic Force Microscope

Nishi

Abe

et al. 2011

Jpn. J. Appl. Phys.

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A single atomic defect on an ionic crystal surface was manipulated at the atomic level using an atomic force microscope. During raster scanning, the defect was manipulated at near the tip–sample distance and at room temperature. The defect, which is imaged as a sharp half-moon shape, moves continuously if the tip is close to the sample surface. The defect randomly moves along a zigzag or straight path or jumps long distances. The movement of the defect on an insulator is complex in contrast to that on semiconductors. The defect moves suddenly owing to the tip approaching the surface when the distance feedback is overshot under the condition of a large difference in frequency shift between the feedback set point and a weak interaction on the defect.

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Noncontact Atomic Force Microscopy for Atomic-Scale Characterization of Material Surfaces

Baykara

2015

Surface Science Tools for Nanomaterials Characterization

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Among the large variety of scanning probe microscopy techniques, noncontact atomic force microscopy (NC-AFM) stands out with its capability of atomicresolution imaging and spectroscopy measurements on conducting, semiconducting as well as insulating sample surfaces. In this chapter, we review the fundamental experimental and instrumental methodology associated with the technique and present key results obtained on different classes of material surfaces. In addition to atomic-resolution imaging, the use of NC-AFM towards the goal of atomic-resolution force spectroscopy is emphasized.

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Study on topographic images of Sn/Si(111)-(√3×√3)R30° surface by non-contact AFM

Cited by 5 publications

References 29 publications

Role of Dangling Bond State Occupancy in Adsorption of Copper Phthalocyanine on Si(111)-Sn-√3 × √3

Role of Dangling Bond State Occupancy in Adsorption of Copper Phthalocyanine on Si(111)-Sn-√3 × √3

Lateral Manipulation of Single Defect on Insulating Surface Using Noncontact Atomic Force Microscope

Noncontact Atomic Force Microscopy for Atomic-Scale Characterization of Material Surfaces

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