Study on thermal stress of the the fused silica irradiated by millisecond–nanosecond combined pulse laser

Xia, Shengqiang; Cai, Jixing; Zhang, Xiaoyun; Li, Jingyi; Jin, Guangyong; Chang, Xinyu

doi:10.1007/s12043-021-02203-z

Cited by 2 publications

(1 citation statement)

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“…In the same year, by researching the damage mechanism of silicon materials caused by nanosecond and millisecond combined laser, it was found that the fusion DT of silicon was significantly reduced by combined pulsed laser irradiation, and the damage mechanism of combined pulsed laser on silicon materials was closely related to the thermal effect of millisecond pulsed laser and the thermal damage effect of nanosecond pulsed laser [14,15]. In 2021, Xia [16] studied the damage mechanism of fused quartz under combined millisecond/ nanosecond laser irradiation, and proposed that the combined millisecond and nanosecond pulsed laser can improve the thermal stress damage efficiency of laser irradiated fused quartz, which is caused by thermal effect and thermal stress effect. It is easy to find that the most used laser compound mode is the combination of millisecond laser and nanosecond laser, and there is no research related to nanosecond/picosecond short pulse combination laser irradiation CCD at present.…”

Section: Introductionmentioning

confidence: 99%

Laser-induced damages to charge coupled devices with combined nanosecond/picosecond short-pulse lasers

Cao,

Xie,

Chang

et al. 2024

Front. Phys.

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The research on laser induced breakdown mechanism of charge coupled devices (CCDs) brings new insights into photoelectric countermeasures. So far combined laser irradiation has been proved to be a more effective measure to destroy CCD. Due to the limitation of short-pulse laser combination method, the mechanism of CCD damage caused by combined short-pulse laser remains unexplored. Here, the distribution of temperature and stress field during the interaction between a combined short-pulse laser and a CCD is analyzed. A nanosecond/picosecond combined short-pulse laser system based on Stimulated Brillouin Scattering (SBS) pulse compression technique is designed. The damage threshold (DT) and properties of CCD by combined laser irradiation are characterized. The results show that the complete DT of combined laser induced CCD breakdown is only 103 mJ/cm2, which is only 44% of that of picosecond laser. The main cause of combined short-pulse laser induced CCD breakdown is short circuit (SC) between silicon substrate and silicon electrode.

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Section: Introductionmentioning

confidence: 99%