Study on the resistive switching properties of epitaxial La0.67Sr0.33MnO3 films

Huang, Lida; Qu, Bingjun; Liu, Litian; Zhang, Liuwan

doi:10.1016/j.ssc.2007.06.006

Cited by 11 publications

(5 citation statements)

References 23 publications

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“…The Co contact itself is a possible candidate, however, nothing indicates a contribution from this side while we know that the LSMO contact can exhibit resistive switching. [13][14][15][16] In addition RS in oxides has often been described [17][18][19][20][21] while for metallic cobalt RS has not been reported. Modification of conducting filaments in the Alq3 can be excluded because we already know that the MR is based on tunneling.…”

Section: Resistive Switching and Voltage Induced Modulation Of Tunnel...mentioning

confidence: 99%

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

et al. 2016

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Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La 0.7 Sr 0.3 MnO 3 /Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La 0.7 Sr 0.3 MnO 3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.In the past years a number of multiferroic tunnel junctions have been demonstrated in which tunneling magnetoresistance (TMR) and total device resistance can be modulated by a voltage pulse. 1,2 The effects are typically explained by tunneling electroresistance (TER) due to a ferroelectric barrier which changes the total resistance and magnetoelectric coupling at the interface between ferroelectric barrier and ferromagnetic contact which changes the TMR in magnitude and sometimes in sign. We observe the same functionality in organic spin valves (OSVs, Fig. 1), which after applying a voltage pulse may change the device resistance by three orders of magnitude or more and modulate their magnetoresistance (MR) from +26% to -38% which is a much larger effect than observed in Refs. 1 or 2. Nevertheless, the absence of a ferroelectric layer in our devices excludes both TER and magnetoelectric coupling as possible explanation. It should, however, be noted that our devices and those from Refs. 1 and 2 have a La 0.7 Sr 0.3 MnO 3 (LSMO) bottom electrode as a common property.FIG. 1: MR traces of a nanosized OSV (LSMO/Alq3/MgO/Co/Ru with 20/12/3/30/10 nm in thickness) for two different resistance states after different voltage pulses taken at 4.3 K. The resistance changes by approx. three decades and the relative MR exhibit a sign reversal from +26% to -38%. Already in 2011 the simultaneous observation of magnetoresistance and resistive switching (RS) has been reported for organic spin valves by Prezioso et al. 3,4 In this case the devices were LSMO/Alq3/Co-based spin valves showing a relative MR of -20% in the initial state. By applying 2 voltage pulses the overall device resistance was increased while the relative MR decreased without changing shape or sign. The device resistance could be increased by two decades while the MR was completely suppressed. A possible explanation suggested by Prezioso et al. was the blocking of filaments or charge trapping in combination with giant magnetoresistance (GMR) and spin injection as a prevalent transport mechanism, however, no clear identification of the underlying physics was possible. Recent results from our own group in structures with only one ferromagnetic electrode (LSMO) also demonstrated RS. However, in thi...

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Section: Resistive Switching and Voltage Induced Modulation Of Tunnel...mentioning

confidence: 99%

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

et al. 2016

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“…In recent years, resistive switching in simple binary transition metal oxide (TMO) thin films, such as NiO and TiO 2 , attracts great interests for possible applications in nonvolatile memory devices [2][3][4][5][6][7][8][9][10][11][12][13][14]. Compared to more complex materials such as Pr 1−x Ca x MnO 3 [15,16], La 1−x Ca x MnO 3 [17] or Cr-doped SrZrO 3 [18], these simple binary oxide TMO materials exhibit advantages not only in their relative simple fabrication process, but also in their compatibility with CMOS processes. As for switching mechanism, many studies attributed it to filament conduction theory which is closely related to the formation and rupture of conducting filaments [6,9].…”

Section: Introductionmentioning

confidence: 99%

Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition

Cao

et al. 2009

Materials Science and Engineering: B

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“…This stability ensures the reliability and longevity of devices incorporating LSMO components. Hence, the unique combination of electronic, magnetic, and structural properties, along with a wide range of tunability, compatibility, and stability, provides advantages and makes it a suitable candidate for the field of memory device applications. − Recently, Sawa et al studied the DRS behavior in an LSMO film by incorporating the Sm 0.7 Ca 0.3 MnO 3 layer . In another report, Liu et al investigated the temperature and compliance current-dependent volatile RS behaviors in LSMO films .…”

Section: Introductionmentioning

confidence: 99%

Compliance-Free and Forming-Free Digital and Analog Resistive Switching in a Perovskite-Based Artificial Synaptic Device: Mimicking Classical Pavlovian Learning

Hasina,

Yadav,

Mukherjee

2024

ACS Appl. Electron. Mater.

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With the rapid progress of artificial intelligence, the integration of biological capabilities into electronic devices has become crucial. In this context, memristive synaptic devices have emerged as key components in bio-inspired electronics for advancing computational applications. However, there are limited reports on achieving multifunctional switching behavior, combining analog resistive switching (ARS) and digital resistive switching (DRS) behaviors in a single-perovskite oxide-based device. In this work, we demonstrate ARS and fundamental synaptic functionalities, including classical Pavlovian learning in a La1–x Sr x MnO3−δ (LSMO)-based memristor. Notably, both compliance-free and forming-free DRS and ARS behaviors are observed in a single LSMO-based memristor fabricated using pulsed laser deposition. Remarkably, all fundamental bio-synaptic features such as potentiation, depression, spike-time-dependent plasticity, paired-pulse facilitation, transition from short-term memory to long-term memory, and learning–forgetting–relearning behaviors are successfully emulated based on the change in device response. Furthermore, we achieve notable improvements in resistive switching (RS) parameters and biosynaptic features due to the proximity of the metal–insulator transition temperature to the room temperature. Hence, this study paves the way for integrating memory and complex learning rules in a single-perovskite-based thin-film device for advanced computing applications.

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Study on the resistive switching properties of epitaxial La0.67Sr0.33MnO3 films

Cited by 11 publications

References 23 publications

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition

Compliance-Free and Forming-Free Digital and Analog Resistive Switching in a Perovskite-Based Artificial Synaptic Device: Mimicking Classical Pavlovian Learning

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