Study on the properties of CuInSe2 ingots grown from the melt using stoichiometric and non-stoichiometric charges

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

“…As a consequence it was found by Shimada et al [10] that the crystal growth of Cu 2 ZnSnS 4 from the melt results in the presence of impurity phases such as Cu 2 SnS 3 , ZnS and SnS, besides the quaternary chalcogenide, probably owing to segregation during the crystallization process. The solidification of a single-phase CZTS from the stoichiometric melt might be improved to some extent by the presence of a suitable seed or the action of a directional cooling, like in the Czochralski, the Bridgman-Stockbarger [11] or the gradient freezing techniques [12]. Single crystals of the Cu 2 FeSnS 4 -Cu 2 ZnSnS 4 pseudobinary series were synthesized by Bernardini et al [13] for structural investigations using the salt-flux technique reported by Moh et al [14].…”

Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

“…7 On the other hand, the sputtering and PLD proceed from a single target and may require Se compensation only if the deposition occurs incongruently. Gremenok et al, 10 Lachab et al, 11 and Dittrich et al 5 have shown that a single target can be fabricated by the melting and quenching process. Gremenok et al, 10 Lachab et al, 11 and Dittrich et al 5 have shown that a single target can be fabricated by the melting and quenching process.…”

“…8,9 In recent years, fostered by the interest to reduce the number of process steps, a number of researchers have attempted to prepare a single target and prepare films suitable for solar cell applications. 11 In a different process, which may suit the industrial requirements, Suryanarayana et al 9 have fabricated chalcopyrite single targets by hot pressing of presynthesized chalcopyrite material at 750 C and 14,500 psi for 2 h. In another significant work, Ning et al 12 could prepare the single target by cold pressing at 14,500 psi followed by sintering at 850 C. They concluded that it was difficult to obtain the target through pressureless sintering. However, this process requires firing of the constituent elements in an evacuated quartz tube for a period that lasts over 24 h and at a temperature usually set above 1000 C. Furthermore, in some cases cracks and/or composition inhomogeneity are observed, which makes the obtained target unsuitable for growing films.…”