Abstract:The current collapse has been one of the most challenging problems in AlGaN/GaN high electron mobility transistors (HEMTs). In recent years, the virtual gate effect has been the most widely accepted cause of the current collapse effect. To effectively improve the current collapse effect and reduce the influence of the virtual gate effect on the device, a point‐contact gate AlGaN/GaN HEMT structure is proposed in this article. Tests show that the device has high transconductance, high cut‐off frequency, and goo… Show more
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