Study on the phase change material Cr-doped Sb 3 Te 1 for application in phase change memory

Xia, Yangyang; Liu, Bo; Wang, Qing; Zhang, Zhonghua; Song, Sannian; Zhang, Song; Yao, Dongning; Wang, Xi; Guo, Xiaohui; Feng, Songlin

doi:10.1016/j.jnoncrysol.2015.05.013

Cited by 17 publications

(3 citation statements)

References 15 publications

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“…These results are also consistent with Si doped Sb, 13 Al doped Sb 2 Te 3 17 and Cr doped Sb 3 Te 1 . 24 Furthermore, the 10 year lifetime for Er doped Sb films increases from 22 °C for Er 0.002 Sb 0.998 to 145 °C for Er 0.018 Sb 0.982 . From this perspective, Er doping enables the Sb thin films to have better reliability than GST (∼80 °C), meeting the requirements for applications in data storage in consumer and automotive systems.…”

Section: Resultsmentioning

confidence: 97%

Improvement of the thermal stability of Sb thin film through erbium doping

Zou

Zhu

et al. 2016

CrystEngComm

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The transition process of a pure Sb thin film from amorphous to crystalline is ultrafast but thermally unstable. We fabricated Er doped Sb thin films by magnetron sputtering for the first time. By measuring the in situ film resistance vs. temperature, it was found that the crystallization temperature increased from 105 °C to 208 °C with increasing Er content, resulting in a significant improvement in the thermal stability. The phase transition speed was investigated using picosecond laser pulses, showing an ultrafast speed of ∼2 ns. SEM, EDS and XRD analyses also demonstrated the existence of Er and the improvement in the thermal stability by increasing Er-doping. The enhanced thermal stability through Er doping onto Sb thin films was attributed to the formation of Sb-Er bonds in doped films measured by XPS. The main outcomes of this work enable a prediction that the Er doped Sb thin films are well suited for data storage applications. ExperimentalErbium doped Sb thin films of Er x Sb 1−x (0.002 ≤ x ≤ 0.018) were deposited on SiO 2 /Si (100) wafers by co-sputtering of Er and Sb targets at room temperature using magnetron sputtering. The purity of the Sb and Er targets was 99.999%. The base pressure in the deposition chamber was 2 × 10 −4 Pa. Sputtering was performed under an Ar gas pressure of 0.3 Pa, a flow of 30 SCCM, and a power of 30 W. The thin film

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Section: Resultsmentioning

confidence: 97%

Improvement of the thermal stability of Sb thin film through erbium doping

Zou

Zhu

et al. 2016

CrystEngComm

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“…Ta tends to combine with Te to form more Ta-Te bonds and extra Sb-Sb bonds. The bond energy of the Ta-Te bond is larger than that of the Sb-Te bond, indicating that more energy is required to break the Ta-Te bond, resulting in better thermal stability [ 20 , 21 ]. Therefore, the thermal stability of Sb 3 Te 1 films was improved after doping with Ta elements.…”

Section: Resultsmentioning

confidence: 99%

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

et al. 2023

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Phase change memory (PCM), a typical representative of new storage technologies, offers significant advantages in terms of capacity and endurance. However, among the research on phase change materials, thermal stability and switching speed performance have always been the direction where breakthroughs are needed. In this research, as a high-speed and good thermal stability material, Ta was proposed to be doped in Sb3Te1 alloy to improve the phase transition performance and electrical properties. The characterization shows that Ta-doped Sb3Te1 can crystallize at temperatures up to 232 °C and devices can operate at speeds of 6 ns and 8 × 104 operation cycles. The reduction of grain size and the density change rate (3.39%) show excellent performances, which are both smaller than that of Ge2Sb2Te5 (GST) and Sb3Te1. These properties conclusively demonstrate that Ta incorporation of Sb3Te1 alloy is a material with better thermal stability and faster crystallization rates for PCM applications.

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“…Many efforts have been made to improve the performance of Sb-rich materials. For example, adding Si, Al, O, and W to Sb-rich materials can effectively improve thermal stability and material grain homogeneity [7]. AlSb, which is less common than GaAs in III-V semiconductors, is called the 6.1 Å family and has indirect and direct band gaps of 1.6 eV and 2.6 eV, respectively [8].…”

Section: Introductionmentioning

confidence: 99%

Exploring the effect of chromium doping on electronic properties, half-metallic and ferromagnetism on AlSb DMS compound through first-principles calculations

El Merzouki,

Benhsin,

Cherraj

2024

Bull. Chem. Soc. Eth.

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With the aim of improving and investigating magnetocaloric insights for spintronic applications, we investigated the electronic structure of Cr-doped AlSb compounds via first-principles calculations using the KKR-CPA-DFT method. Here, we investigated the stability of alloy materials as a function of magnetic contamination. A stable semimetallic ferromagnetic phase can be obtained by introducing the Cr element into AlSb, which is inherent in nonmagnetic semiconductors. The total magnetic moment of the doped material changes from 0.1167 μB to 0.716 μB for 4% and 25% Cr, respectively. Curie temperature changed to 740 K at 25% Cr concentration. KEY WORDS: Magnetic materials, Semiconductor, Alloys, Impurities Bull. Chem. Soc. Ethiop. 2024, 38(2), 297-304. DOI: https://dx.doi.org/10.4314/bcse.v38i2.2

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Study on the phase change material Cr-doped Sb 3 Te 1 for application in phase change memory

Cited by 17 publications

References 15 publications

Improvement of the thermal stability of Sb thin film through erbium doping

Improvement of the thermal stability of Sb thin film through erbium doping

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Exploring the effect of chromium doping on electronic properties, half-metallic and ferromagnetism on AlSb DMS compound through first-principles calculations

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