Study on the Mechanism of Solid-Phase Oxidant Action in Tribochemical Mechanical Polishing of SiC Single Crystal Substrate

Wanting, Qi; Cao, Xiaofeng; Xiao, Wen; Wang, Zhankui; Su, Jianxiu

doi:10.3390/mi12121547

Cited by 18 publications

(10 citation statements)

References 25 publications

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“…However, surface roughness (Sa) also increased around two fold for the test group, indicating the effect of non-uniform abrasion [ 10 ]. In 2021, Qi et al investigated five solid-phase abrasive oxidants, including Na 2 CO 3 -1.5H 2 O 2 , KIO 3 , KClO 3 , KMnO 4 and NaOH, for Tribo-CMP on 6H-SiC [ 11 ]. The SiC surface can be oxidized by oxygen generated from the decomposition of oxidants, along with friction-induced heat and water in the slurry formulation or ambient air.…”

Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

“…A MRR of more than 1 µm h −1 can be consistently obtained for all five oxidants, but the resulting surface roughness was unsatisfactory. Meanwhile, obvious surface scratches and pits can be found under SEM inspection [ 11 ]. In addition to the solid-phase abrasive oxidants described above, in 2021, Ni et al applied synthetic SiO 2 /CeO 2 abrasives for CMP on the Si-face surface, under the conditions of polishing pressure = 3.5 psi and rotation speed = 90 rpm with a polyurethane pad [ 12 ].…”

Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

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Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

et al. 2022

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Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

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Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

Section: Various Sic Cmp Technologiesmentioning

confidence: 99%

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

et al. 2022

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“…Tribochemical mechanical polishing is a new technology in the field of Ultraprecision machining [20,21]. It uses abrasives and chemical additives to conduct tribochemical reactions on the polishing pad, change the surface structure of the workpiece through chemical action, and effectively remove the workpiece materials through mechanical action.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the advantages of good surface flatness and fewer scratches on the workpiece obtained by this method, it has attracted extensive the attention of many scholars. Qi et al [28] used five different solid-phase oxidants for the tribochemical mechanical polishing of silicon carbide and found that oxygen was generated on the surface of silicon carbide, and the experiments showed that all five oxidants could have a tribochemical reaction with silicon carbide, and the oxygen generated by the tribochemical reaction between the solid-phase oxidants and silicon carbide could oxidize the surface of silicon carbide and generate a shear film that could be easily removed. Ootani et al [29] mainly studied the friction properties of Si3N4 and SiC in water, and explored their mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Research of dry tribochemical mechanical polishing SiC with an innovation abrasive-catalytic abrasive cluster

Wang

Ding²,

Wang³

et al. 2023

Preprint

Self Cite

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Abrasive particles have a crucial influence on the material removal rate and surface quality of the workpiece in tribochemical mechanical polishing. Therefore, this article selects a self-made catalytic abrasive cluster to polish the 6H-SiC and explore the removal mechanism of polishin silicon carbide in the new catalytic abrasive cluster. The tribochemical mechanical polishing test and friction and wear test of 6H-SiC were carried out with three different abrasives, and the evaluation parameters such as material removal rate, surface roughness and friction coefficient were obtained. Quanta 200 scanning electron microscope(SEM) and oxfobrdinca 250 energy dispersive spectrometer (EDS) and x-ray diffraction(XRD)diffractometer were used to observe the surface, analyze the elements and determine the composition of silicon carbide workpiece after tribochemical mechanical polishing. The experimental result shows that oxygen is produced in the tribochemical mechanical polishing of silicon carbide by catalytic abrasive cluster, which makes the silicon carbide surface generate SiO2 shear film that is easy to be removed. Comparing with iron-based white corundum mixed abrasive and Al2O3 abrasive, the catalytic abrasive cluster has better processability for 6H-SiC, and the material removal rate can reach to 42.928nm/min.

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“…Moreover, to eliminate microcracks and improve surface quality, chemical mechanical polishing (CMP), which is an effective method to obtain smooth and damage-free wafers through chemical reactions, is employed; however, the material removal rate (MRR) of SiC wafers is significantly low because of the high hardness and stable chemical properties of the SiC materials. Therefore, the production of high-performance SiC wafers is limited because CMP using acid-base chemical reagents is expensive and polluting [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Understanding the Mechanisms of SiC–Water Reaction during Nanoscale Scratching without Chemical Reagents

Cheng

Luo

Lu³

et al. 2022

Micromachines

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Microcracks inevitably appear on the SiC wafer surface during conventional thinning. It is generally believed that the damage-free surfaces obtained during chemical reactions are an effective means of inhibiting and eliminating microcracks. In our previous study, we found that SiC reacted with water (SiC–water reaction) to obtain a smooth surface. In this study, we analyzed the interfacial interaction mechanisms between a 4H-SiC wafer surface (0001¯) and diamond indenter during nanoscale scratching using distilled water and without using an acid–base etching solution. To this end, experiments and ReaxFF reactive molecular dynamics simulations were performed. The results showed that amorphous SiO2 was generated on the SiC surface under the repeated mechanical action of the diamond abrasive indenter during the nanoscale scratching process. The SiC–water reaction was mainly dependent on the load and contact state when the removal size of SiC was controlled at the nanoscale and the removal mode was controlled at the plastic stage, which was not significantly affected by temperature and speed. Therefore, the reaction between water and SiC on the wafer surface could be controlled by effectively regulating the load, speed, and contact area. Microcracks can be avoided, and damage-free thinning of SiC wafers can be achieved by controlling the SiC–water reaction on the SiC wafer surface.

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Study on the Mechanism of Solid-Phase Oxidant Action in Tribochemical Mechanical Polishing of SiC Single Crystal Substrate

Cited by 18 publications

References 25 publications

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Research of dry tribochemical mechanical polishing SiC with an innovation abrasive-catalytic abrasive cluster

Understanding the Mechanisms of SiC–Water Reaction during Nanoscale Scratching without Chemical Reagents

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