2018
DOI: 10.1016/j.cap.2018.03.012
|View full text |Cite
|
Sign up to set email alerts
|

Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
4

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 19 publications
0
3
0
Order By: Relevance
“…It would require too many specimens with the full factorial design, so the orthogonal experimental design will be adopted for the compressive strength experimental study to reduce the required experimental specimens [25]. For the electrical characteristic experiment study, the four-electrode method will be adopted, which has been proved that it can provide more accurate measured results [26] than those with other measured methods.…”
Section: Introductionmentioning
confidence: 99%
“…It would require too many specimens with the full factorial design, so the orthogonal experimental design will be adopted for the compressive strength experimental study to reduce the required experimental specimens [25]. For the electrical characteristic experiment study, the four-electrode method will be adopted, which has been proved that it can provide more accurate measured results [26] than those with other measured methods.…”
Section: Introductionmentioning
confidence: 99%
“…The ρ C is measured to be (2.8 ± 0.2) × 10 −5 cm 2 for the HT sample, much lower than that of the RT-sample, which is (6.4 ± 0.5) × 10 −3 cm 2 . 21 The I-V behavior is improved by elevating the chamber temperature. It is speculated that the lowering of the ρ C may come from a more intimate contact between Pd and p-GaN due to the desorption of carbon or oxide contaminations at Pd/p-GaN interface in an ultra-high vacuum environment at elevated temperature, leading to the increase of Pd-Ga solid solutions and the concentration of Ga vacancies.…”
Section: Resultsmentioning
confidence: 99%
“…A diffusion barrier layer is essential to minimize the inter-diffusion of the metal layers. Among various metals reported previously, 6,9,[18][19][20][21] Pt is commonly used as the barrier layer due to the high melting point, high electrical conductivity, high thermal and chemical stability. 22,23 However, some amount of the Au and Pd atoms still inter-diffuse through the grain boundaries and defects.…”
mentioning
confidence: 99%