Study on the low-angle forward-reflected neutral beam etching system for SiO2 etching

Chung, Moon Jae; Lee, D.H.; Yeom, Geun‐Young

doi:10.1016/s0040-6090(02)00845-3

Cited by 7 publications

(5 citation statements)

References 10 publications

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“…Etching of high aspect ratio patterns with plasmas is susceptible to sidewall charging. In order to avoid the aforementioned problems related to the presence of charge and (V)UV radiation, etching with energetic neutral beams (NB) has been proposed for nanometre-scale device fabrication [1][2][3][4][5][6][7][8]. Different approaches used for energetic neutral beam generation include laser detonation [1] as well as surface [2,9] and volume [10] neutralization of ion beams.…”

Section: Introductionmentioning

confidence: 99%

Extraction and neutralization of positive and negative ions from a pulsed electronegative inductively coupled plasma

Marinov¹,

Otell²,

Bowden³

et al. 2015

Plasma Sources Sci. Technol.

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Almost electron-free (ion-ion) plasmas can be transiently formed during the afterglow phase of pulsed plasmas in electronegative gases. In ion-ion plasmas, both positive and negative ions can be extracted which makes them advantageous for a number of applications. In this paper, we investigate the extraction and acceleration of positive and negative ion beams from a pulsed inductively coupled plasma in SF 6 . The plasma is bounded by two electrodes biased synchronously with the discharge modulation. It is shown that when a DC bias voltage is applied during the afterglow phase, positive/negative ions are accelerated in a positive/ negative space charge sheath formed in front of one of the electrodes. The energy of extracted ions closely follows the amplitude of the applied bias voltage (25-150 V) and the peak beam current density reaches 2 A m −2 . With a view to using the described system as a source of energetic neutral beams for low damage material processing, simultaneous extraction and surface neutralization of positive and negative ions using an extraction electrode with high aspect ratio apertures is investigated.

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Section: Introductionmentioning

confidence: 99%

Extraction and neutralization of positive and negative ions from a pulsed electronegative inductively coupled plasma

Marinov¹,

Otell²,

Bowden³

et al. 2015

Plasma Sources Sci. Technol.

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“…The neutralization efficiency was estimated by measuring the ion flux (J a ) extracted from the ion source before reflecting on the reflector and the ion flux (J b ) extracted from the reflector after the reflection under the same process conditions using a Faraday cup, and the ratio of (J a − J b ) × 100/J a was taken as the neutralization efficiency. Figure 3 shows the effect of the reflector (with and without a reflector in front of the ion source) and acceleration voltage on the ion current density measured using a Faraday cup for the gases SF 6 , NF 3 , CF 4 and Ar on the estimation of the neutralization efficiency of the two-grid system neutral beam source [28]. As shown in the figure, the measured ion current density increased with increasing acceleration grid voltage due to the increased extraction of ions at the higher voltage.…”

Section: Measurement Of Neutralization Percentage For Various Gasesmentioning

confidence: 99%

“…Figure 3 shows the effect of the reflector (with and without a reflector in front of the ion source) and acceleration voltage on the ion current density measured using a Faraday cup for the gases SF 6 , NF 3 , CF 4 and Ar on the estimation of the neutralization efficiency of the two-grid system neutral beam source [28]. As shown in the figure, the measured ion current density increased with increasing acceleration grid voltage due to the increased extraction of ions at the higher voltage.…”

Section: Measurement Of Neutralization Percentage For Various Gasesmentioning

confidence: 99%

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Low angle forward reflected neutral beam source and its applications

Park¹,

Kim²,

Kang³

et al. 2008

J. Phys. D: Appl. Phys.

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As one of the many nano-device fabrication techniques employed in the semiconductor industry, neutral beams are being examined using various methods to solve possible charge-related problems that occur during device processing. This review introduces a neutral beam generated by surface neutralization of an ion beam using a low angle forward reflection technique and explains its application to various areas such as surface treatments and etching. The neutralization efficiency of an ion beam using a low angle forward reflection technique was approximately 99.7%. When a metal-oxide-semiconductor device was etched using a reactive neutral beam, it was confirmed that charge-related problems such as aspect-ratio-dependent etching and gate oxide charging could be removed using reactive neutral beam etching instead of conventional reactive ion etching. Neutral beams can be beneficial to other devices such as the III-V device and field emission device.

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“…More details on the low-angle-reflected neutralization technique can be found elsewhere. 12,13 The substrate was maintained at room temperature by a water-chilling system and, to distribute Cl 2 gas during the adsorption stage, a gas shower ring was installed. Also, between the substrate and the Ar neutral-beam source, an automatic shutter was installed to control the Ar-beam irradiation time.…”

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confidence: 99%

Surface Analysis of Atomic-Layer-Etched Silicon by Chlorine

Park

Lee

et al. 2007

Electrochem. Solid-State Lett.

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Silicon atomic-layer etching ͑ALET͒ was carried out by the adsorption of Cl 2 to form silicon chlorides followed by the desorption of the silicon chlorides formed on the surface by irradiating an Ar neutral beam of a low energy. The silicon surface during the silicon ALET was investigated by X-ray photoelectron spectroscopy ͑XPS͒ and atomic force microscopy, and its etch mechanism was studied. XPS data showed that during the Cl 2 adsorption stage, silicon chloride bonding peaks related to SiCl and SiCl 3 were formed. The peak intensity related to SiCl bonding is slowly decreased during the desorption of silicon chlorides, and when the SiCl bondings are removed completely by irradiating enough Ar neutral-beam dose to the surface, the saturated silicon etch rate of 1.36 Å/cycle which is related to one Si monolayer per cycle could be obtained. Also, at this condition, the surface roughness is close to the roughness of the silicon substrate itself. The SiCl bondings formed on the silicon surface during the adsorption stage are related to the desorption species during the ALET, while the SiCl 3 bondings are related to the species formed with the surface silicon damaged during the desorption stage.As the critical dimension of the semiconductor devices is decreased to nanoscale, etching techniques that can etch and control semiconductor materials with the atomic scale have become increasingly important. 1 Conventional dry-etching techniques such as reactive ion etching can etch nanoscale devices vertically and fast; however, they cannot control the etch depth with the atomic scale and tend to cause surface damage due to the irradiation of high-energy ions during the etching. 2,3To resolve the above problems related to conventional etching techniques and to etch the semiconductor materials with the atomic scale, atomic-scale etching techniques named as molecular-layer etching, layer-by-layer etching, digital etching, etc. have been investigated by various researchers. 4-9 The atomic-scale etching is carried out using a process cycle composed of ͑step 1͒ adsorption of reactant molecules on the surface, ͑step 2͒ evacuation of the excess reactant, ͑step 3͒ energetic particles irradiation to the reactantadsorbed surface for the desorption of surface-reactant chemisorbed species, and ͑step 4͒ evacuation of the etch products. Many publications related to the surface reaction of silicon and Cl 2 ͑step 1͒ can be found, even though some of them are not related to the atomic-scale etching, and its adsorption mechanism has been well investigated. 10 However, possibly due to various differences in the experimental setup and parameters, conflicted results are found on the removal of the adsorbed species, which is related to the etch rates for the atomic scale etching. [7][8][9] In this study, based on the our previous experiments related to the silicon atomic-layer etching ͑ALET͒ carried out using Cl 2 gas and an Ar neutral beam of a low energy, 11 the adsorbed Cl 2 bonding states during the Cl 2 adsorption and the desorption mechani...

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Study on the low-angle forward-reflected neutral beam etching system for SiO2 etching

Cited by 7 publications

References 10 publications

Extraction and neutralization of positive and negative ions from a pulsed electronegative inductively coupled plasma

Extraction and neutralization of positive and negative ions from a pulsed electronegative inductively coupled plasma

Low angle forward reflected neutral beam source and its applications

Surface Analysis of Atomic-Layer-Etched Silicon by Chlorine

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