Study on the ITO work function and hole injection barrier at the interface of ITO/a-Si:H(p) in amorphous/crystalline silicon heterojunction solar cells

Oh, Woong-Kyo; Hussain, Shahzada Qamar; Lee, Youn-Jung; Lee, Youngseok; Ahn, Shihyun; Yi, Junsin

doi:10.1016/j.materresbull.2012.04.106

Cited by 49 publications

(13 citation statements)

References 18 publications

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“…Ni[S 2 C 2 (NH 2 ) 2 ] 2 had the lowest IP(v) value and the lowest IP(v) among the studied complexes. Unfortunately, the WF of indium-tin oxide (ITO), the commonly used hole injection layer material, is ~4.9 eV [31]. It is lower than the IP values of all the studied complexes.…”

Section: Resultsmentioning

confidence: 99%

Regulating the Optoelectronic Properties of Nickel Dithiolene by the Substituents: A Theoretical Study

et al. 2018

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Dithiolene-based complexes show great potential to be applied as materials for organic optoelectronic devices. In this study, we theoretically designed a series of complexes based on nickel dithiolene and its substituted derivatives, the optoelectronic properties of which were comparatively studied by density functional theory (DFT)/time-dependent density functional theory (TD-DFT). The results show that the charge injection property of nickel dithiolene complexes can be significantly improved with introduction of electron-withdrawing groups. The charge transportation property of nickel dithiolene depends on the conjugation degree of the system. The energy gaps between highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) are determined by the substituents, which makes the maximum absorption wavelength red-shift from the visible to the near-infrared (NIR) region. The electron density difference graph shows that the electron transition from the ground state to the first excited state is assigned to π-π* transition mainly from HOMO to LUMO. The regularity of substituent effect revealed by us in this study will shed light on the application of nickel dithiolenes as potential optoelectronic materials.

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Section: Resultsmentioning

confidence: 99%

Regulating the Optoelectronic Properties of Nickel Dithiolene by the Substituents: A Theoretical Study

et al. 2018

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“…Bare Eagle glass showed 92% transmittance in the visible wavelength (400~800) nm region. All the ITO films showed more than 85% transmittance in the vis-NIR (400~1,100) nm wavelength region [1][2][3][4][5]20] …”

Section: Resultsmentioning

confidence: 99%

“…ITO (indium tin oxide) films are widely used as front TCO (transparent conductive oxide) in LCDs (liquid-crystal displays), OLEDs (organic light emitting devices), and solar cells due to their low resistivity, high transmittance in the visible wavelength region, and wide optical band gap [1][2][3][4]. The wide application of ITO films have resulted in an extensive study, both on their preparation and characterization.…”

Section: Introductionmentioning

confidence: 99%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of 2.68×10 -4 Ω·cm, high hall mobility of 46.89 cm 2 /V.s, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

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“…In several earlier works reporting on the workfunction of TCOs such as indium-tin oxide (ITO) [2][3][4] and molybdenum oxide (MoO x ) 5,6 etc, the values were obtained as the bulk materials determined by ultraviolet and/or x-ray photoelectron spectroscopy (UPS/XPS). Although there have been some earlier reports on workfunction values determined by capacitance-voltage (C-V) analysis, the materials of interest were the electrode materials used in the clean metal-oxide-semiconductor (MOS) technology such as doped polysilicon and hafnium-silicide.…”

Section: Introductionmentioning

confidence: 99%

Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

et al. 2017

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Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC.

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Study on the ITO work function and hole injection barrier at the interface of ITO/a-Si:H(p) in amorphous/crystalline silicon heterojunction solar cells

Cited by 49 publications

References 18 publications

Regulating the Optoelectronic Properties of Nickel Dithiolene by the Substituents: A Theoretical Study

Regulating the Optoelectronic Properties of Nickel Dithiolene by the Substituents: A Theoretical Study

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

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