Study on the Gain Characteristics of Optically Pumped Semiconductor Laser

Lingling, 华玲玲 Hua; Yanrong, 宋晏蓉 Song; Peng, 张鹏 Zhang; Xiao, 张晓 Zhang; Kai, 郭凯 Guo

doi:10.3788/aos20103006.1702

Cited by 2 publications

(1 citation statement)

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“…Due to the complex working principle and the effects of internal parameters, it is one of the popular ways that simulate the output performance of a laser diode by using the numerical analysis [1,2]. Centering to the classic rate equations of electrons transition, many research works, such as spectrum, noise, response on frequency, are developed [3][4][5][6][7]. However, the analysis on the characteristics of output power with the thermal effect is rare to be reported [2,8,9].…”

Section: Introductionmentioning

confidence: 99%

The Analysis of Output Power of a Laser Diode Based on the Difference Method

Garidi

Yang

2011

KEM

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It is an expedient and efficient method to simulate the output power characteristics of a laser diode through the numerical analysis. In this paper, firstly, based on the rate equations of the electrons transition in the active layer, the functions of some key parameters, such as internal quantum efficiency, threshold current and leakage current, etc., are defined with the variance of working temperature. And an accurate numerical analytical model is built by adopting the low-complexity difference method. Then, the simulated results are compared with the results from testing and Optiwave3.0 software. The results show that, by using the proposed analytical model, the simulation on the output power characteristics of a laser diode can be realized in all input current fields, which overcomes the drawbacks within the Optiwave3.0 software. At the same time, the mean deviation between the simulated results and testing results is reduced obviously, and the average error is only 3.88%.

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Section: Introductionmentioning

confidence: 99%

The Analysis of Output Power of a Laser Diode Based on the Difference Method

Garidi

Yang

2011

KEM

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Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers

Fan¹,

Li²,

Ma³

et al. 2012

Acta Phys. Sin.

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A simple model of calculating the linewidth enhancement factor ( factor) is presented by introducing the correlative theory and its conversion formula of the factor in detail. The contributions of interband transition, free carrier absorption and band gap narrowing to the factor are taken into account. Carrier concentration and differential gain dependence of photon energy are obtained from the gain curves for different carrier concentrations. The gain curves and the factor of InGaAs/GaAs quantum well are simulated, separately, and the results accord well with those reported in the literature. Subsequently discussed are two important parameters of InGaAs/GaAs quantum well laser containing quantum well width and In mole fraction. The results show that the increase of two parameters leads the factor to increase.

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Study on the Gain Characteristics of Optically Pumped Semiconductor Laser

Cited by 2 publications

References 0 publications

The Analysis of Output Power of a Laser Diode Based on the Difference Method

The Analysis of Output Power of a Laser Diode Based on the Difference Method

Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers

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