Electrodeposition technique is very useful for depositing n-type Cu 2 O thin films on various substrates. However, most of the reported n-type Cu 2 O thin film electrodes exhibit not only ntype photoactivity but also p-type photoactivity in photoelectrochemical cells. In this study, current-voltage characteristics and zero bias spectral response measurements were employed to investigate the possibilities to remove/minimize this unwanted p-type behaviour of n-type Cu 2 O thin films electrodeposited on Ti substrate. For this, prior deposition of Cu thin films on Ti substrate, low temperature annealing of Cu 2 O films in air and optimization of deposition bath pH were investigated. Growth of a very thin Cu film improved the n-type photosignal significantly and reduced the p-type photoresponse of the films. Films electrodeposited using an acetate bath of pH 6.1 produced only the n-type photoresponse. Low temperature annealing of Cu 2 O films in air improved the n-type photoresponse and it was found that annealing at 100 °C for 24 h produces the best result. These methods will be very useful to obtain electrodeposited Cu 2 O thin film with improved n-type photoactivity suitable for applications in thin film solar cells and other devices.