Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Zhang, Jiaoqi; Sun, Shaoyu; Xia, Ling; Wu, Wengang; Jin, Yufeng

doi:10.1109/icet55676.2022.9825118

Cited by 2 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When the device is in the off-state condition, electrons are captured by defects to form negative charge centers, and the capture position is usually on the drift region from the side of the gate close to the drain [ 8 , 9 ]. This degradation widely occurred in both E-mode and D-mode GaN HEMT devices [ 10 , 11 ]. When the device is switched from off-state to on-state conditions, electrons are emitted by defects and participate in the process of conduction again.…”

Section: Introductionmentioning

confidence: 99%

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

Yang,

Fan,

Zhang

et al. 2023

Micromachines

View full text Add to dashboard Cite

In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved the Al2O3/AlGaN interface with Dit of ~2 × 1012 cm−2 eV−1, and thus effectively reduced the current collapse and the dynamic Ron degradation. The devices showed good electrical performance with low Vth hysteresis and peak trans-conductance of 107 mS/mm. Additionally, when the devices operated under 25 °C pulse-mode stress measurement with VDS,Q = 40 V (period of 1 ms, pulse width of 1 μs), the dynamic Ron increase of ~14.1% was achieved.

show abstract