Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers

Seki, S.; Oohashi, H.; Sugiura, Hiroaki; Hirono, T.; Yokoyama, K.

doi:10.1109/3.511561

Cited by 104 publications

(35 citation statements)

References 33 publications

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“…There has been considerable effort to model the temperature dependence of the threshold current. However, only a few studies are based on a detailed microscopic self-consistent description of the laser [1], [2]. Moreover, the temperature-dependent dynamic characteristics have only been investigated using rate equation models without taking into account the spatial distribution of the carrier densities in the multi-quantum-well (MQW) active layer [3].…”

Section: Introductionmentioning

confidence: 99%

“…This is especially true for InP-based lasers operating in the telecommunications wavelength range where values are relatively low, implying an undesirable, strong temperature dependence for the threshold current. Various explanations have relied on the temperature dependence of the Auger recombination process, the material gain, the free-carrier absorption, and leakage processes [1], [2], [4]- [9]. However, in practice, all of these physical processes have an important role in the internal operation of the laser, often with a significant interdependence.…”

Section: Introductionmentioning

confidence: 99%

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Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

Witzigmann¹,

Hybertsen²,

Reynolds³

et al. 2003

IEEE J. Quantum Electron.

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Abstract-The temperature dependence of the performance of 1.3-m Fabry-Perot (FP) multiple-quantum-well (MQW) lasers is analyzed using detailed microscopic simulations. Both static and dynamic properties are extracted and compared to measurements. Devices with different profiles of acceptor doping in the active region are studied. The simulation takes into account microscopic carrier transport, quantum mechanical calculation of the optical and electronic quantum well properties, and the solution of the optical mode. The temperature dependence of the Auger coefficients is found to be important and is represented by an activated form. Excellent agreement between measurement and simulation is achieved as a function of both temperature and doping profile for static and dynamic properties of the lasers, threshold current density, and effective differential gain. The simulations show that the static carrier density, and hence the contribution to the optical gain, varies significantly from the quantum wells on the p-side of the active layer to those on the n-side. Furthermore, the modal differential gain and the carrier density modulation also vary. Both effects are a consequence of the carrier dynamics involved in transport through the MQW active layer. Despite the complexity of the dynamic response of the MQW laser, the resonance frequency is determined by an effective differential gain, which we show can be estimated by a gain-weighted average of the local differential gain in each well.Index Terms-Laser modulation response, laser simulation, laser threshold current, optical gain, semiconductor quantum well laser diode.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

Witzigmann¹,

Hybertsen²,

Reynolds³

et al. 2003

IEEE J. Quantum Electron.

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“…Hence, the current density j QW ¼ eB 2D (n QW ) 2 of spontaneous recombination in the QW does not change with j above the lasing threshold and is given by Eq. (6).…”

Section: Theoretical Modelmentioning

confidence: 99%

“…In the conventional design of injection lasers, there is always bipolar (i.e., both electron and hole) population, and hence electron-hole recombination, not only in the active region [quantum wells (QWs), quantum wires, or quantum dots (QDs)] but also in the optical confinement layer (OCL). [1][2][3][4][5][6][7][8][9][10] Parasitic recombination outside the active region presents a major cause for the temperature-dependence of the threshold current in conventional semiconductor lasers. It also leads to sublinearity of the light-current characteristic (LCC) in such lasers.…”

mentioning

confidence: 99%

Light-current characteristic of a quantum well laser with asymmetric barrier layers

Asryan

Kryzhanovskaya

Maximov

et al. 2013

Journal of Applied Physics

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Articles you may be interested in Improvement of the performance characteristics of deep violet InGaN multi-quantum-well laser diodes using step-graded electron blocking layers and a delta barrier J. Appl. Phys. 113, 123108 (2013) Light-current characteristic (LCC) of a novel type of quantum well (QW) lasers-QW lasers with asymmetric barrier layers (ABLs)-is studied. The ABLs (one on each side of the QW) prevent electrons from entering the hole-injecting side of the structure and holes from entering the electron-injecting side. The use of ABLs thus suppresses the parasitic electron-hole recombination outside the QW and eliminates the mechanism of sublinearity of the LCC in conventional lasers associated with this recombination and with the carrier capture delay into the QW. As a result, no matter how slow is the carrier capture into the QW, the LCC of an ABL QW laser is virtually linear. In an ABL laser containing indent layers between the QW and each of the ABLs (parasitic recombination still occurs in these thin layers), even in the case of slow capture of carriers into the QW, the LCC is also considerably more linear than in a reference conventional QW laser. V C 2013 AIP Publishing LLC.[http://dx

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“…Our low-temperature, high-pressure data confirm the results of previous atmospheric pressure measurements on the same devices which indicated a transition in the dominant recombination mechanism from radiative to Auger as the device temperature is increased from ϳ100 to 300 K. Much work has been focused on the fundamental optical processes and the limiting factors in these laser systems. [1][2][3][4][5][6][7][8][9][10][11][12] Such knowledge enables us to investigate the scope for further device optimization by means of band structure engineering in low-dimensional heterostructure systems such as quantum-wells (QWs), quantum barriers, quantum wires, and quantum dots. In general, the threshold current, I th , of semiconductor lasers may be considered to consist of four carrier density, n, dependent recombination channels, 13,14 namely, monomolecular recombination ͑ϰn͒ which describes recombination via traps and defects, band-to-band radiative recombination ͑ϰn 2 ͒, Auger recombination ͑ϰn 3 ͒, and carrier leakage.…”

mentioning

confidence: 99%

Radiative and Auger recombination in 1.3μm InGaAsP and 1.5μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

Jin

Sweeney

Ahmad

et al. 2004

Applied Physics Letters

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Single-mode quantum cascade lasers employing asymmetric Mach-Zehnder interferometer type cavities Appl. Phys. Lett. 101, 161115 (2012) Bistability patterns and nonlinear switching with very high contrast ratio in a 1550nm quantum dash semiconductor laser Appl. Phys. Lett. 101, 161117 (2012) Relative intensity noise of a quantum well transistor laser Appl. Phys. Lett. 101, 151118 (2012) Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate Appl. Phys. Lett. 101, 151113 (2012) Ground state terahertz quantum cascade lasers

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Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers

Cited by 104 publications

References 33 publications

Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

Light-current characteristic of a quantum well laser with asymmetric barrier layers

Radiative and Auger recombination in 1.3μm InGaAsP and 1.5μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

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