2021
DOI: 10.1016/j.mssp.2020.105369
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Study on radiation damage effects on CdZnTe detectors under 3 MeV and 2.08 GeV Kr ion irradiation

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Cited by 6 publications
(3 citation statements)
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“…The film was amorphous when the irradiation fluence was 5 × 10 12 n cm −2 . Bao et al 19 reported that the damage of 3 MeV Kr ion irradiation to CdZnTe crystals is greater than that of 2.08 GeV Kr ion irradiation because of a higher proportion of nuclear energy deposition. However, the affecting mechanism of heavy ion irradiation damage on the electrical properties in CdZnTe crystals is still controversial.…”
Section: Introductionmentioning
confidence: 99%
“…The film was amorphous when the irradiation fluence was 5 × 10 12 n cm −2 . Bao et al 19 reported that the damage of 3 MeV Kr ion irradiation to CdZnTe crystals is greater than that of 2.08 GeV Kr ion irradiation because of a higher proportion of nuclear energy deposition. However, the affecting mechanism of heavy ion irradiation damage on the electrical properties in CdZnTe crystals is still controversial.…”
Section: Introductionmentioning
confidence: 99%
“…Currently, in world practice, silicon detectors, and germanium detectors are mainly used [1,2] to detect charged particles, also for a long period of time, other detectors have been used including cadmium telluride (CdTe) and gallium arsenide (GaAs-detectors) [3][4][5], as well as CdZnTe [6,7] for similar purposes.…”
Section: Introductionmentioning
confidence: 99%
“…The process of irradiation might induce the displacement of atoms or electron defects which include the changes in the valence state of network atoms, modifier, or impurity atoms. Moreover, the changes in the glow curve shape can be used to deduce the damage created by the high radiation to the thermoluminescent material [26]. The extent of disordering in glass network can be deduced from Urbach energy (Urbach tail) which described the localized states present in the bandgap [27].…”
Section: Introductionmentioning
confidence: 99%