Study on modeling of resist heating effect correction in EB mask writer EBM-9000

Nomura, Haruyuki; Kamikubo, Takashi; Suganuma, Mizuna; Kato, Yasuo; Yashima, J.; Nakayamada, Noriaki; Anze, Hirohito; Ogasawara, Masataka

doi:10.1117/12.2199615

Cited by 2 publications

(1 citation statement)

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“…3,5,[16][17][18] Recently, the heating effect has been attracting attention, especially in relation to critical dimension deviation in mask manufacturing. [19][20][21][22][23][24] The inhomogeneous temperature increase in the resist on the mask substrate disturbs precise pattern transfer. However, the physical and/ or chemical mechanisms that induce the heating effect on the resist sensitivity are still unknown.…”

Section: Introductionmentioning

confidence: 99%

Heating effect of the radiation chemistry of polyhydroxystyrene-type chemically amplified resists

Ikari¹,

Okamoto²,

Konda³

et al. 2020

Jpn. J. Appl. Phys.

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The photomask used in the lithography process has the important role of transferring circuit pattern images onto the photoresist. To meet the demand for increased photomask manufacturing throughput, the current density of electron beam (EB) writers has been increased. EB exposure locally increases the resist temperature on the mask substrate depending on various factors, including current density, shot size, and writing order. Resist sensitivity increases with irradiated resist temperature, a phenomenon known as “heating effect”. In this study, we reported the cause of the temperature-dependent sensitivity increase in a polyhydroxystyrene-type chemically amplified resist. The experimental results, including acid generation efficiency measurements and pulse radiolysis with changing temperature, suggest that the heating effect is mainly caused by the deprotonation efficiency associated with the radical cation of the base polymer.

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