Study on micro-nanocrystalline structure control and performance of ZnWO₄ photocatalysts

Abstract

ZnWO4 micro/nanocrystals with different sizes and well-developed crystals were synthesized by the molten salt method at low temperature.

Influence of microwave-assisted hydrothermal treatment time on the crystallinity, morphology and optical properties of ZnWO4 nanoparticles: Photocatalytic activity

“…The small variation in Egap of powders associated with variation in photocatalytic activity (shown in Fig. 6) indicates that factors associated with crystal structure and surface morphology are the main factors that interfere with photocatalysis, as observed in other works [18,44]. The adsorptive capacity of ZnWO 4 nanoparticles was estimated by maintaining them under agitation with methylene blue (MB) and methyl orange (MO) dyes without contact with any source of radiation.…”

Preparation and luminescence properties of ZnWO4:Eu3+,Tb3+ phosphors

“…Tungstate salts usually have permissible electron transitions, so k = 1/2 was assumed for calculations. [ 10,11 ] ZnWO 4 obtained band gap values of 3.46 eV, ZnWO 4 :5%Eu 3+ obtained band gap values of 3.44 eV, ZnWO 4 :5%Tb 3+ obtained band gap values of 3.32 eV, and ZnWO 4 :5%Eu 3+ ,5%Tb 3+ obtained band gap values of 3.3 eV. Eu 3+ and Tb 3+ entered the lattice at different positions and degrees, such that the band gap value decreased, and the optical transition generally occurred near the top of the valence band and the bottom of the conduction band, making it conducive for luminescence.…”

Fe-Doped g-C3N4: High-Performance Photocatalysts in Rhodamine B Decomposition

“…Semiconductors that possess attractive properties such as low cost, non-toxic, mechanically and thermally durable, high efficiency of electron-hole pairs production, low electron-hole recombination rate have been targeted as the best and most flexible for AOPs for several decades [ 10 , 11 , 12 , 13 , 14 ]. In particular, several typical compounds can be mentioned as titanium dioxide TiO 2 [ 15 , 16 ], perovskite materials ABO 3 [ 17 , 18 , 19 , 20 ], zinc oxide ZnO [ 21 , 22 ], zinc tungsten oxide ZnWO 4 [ 23 , 24 , 25 ] and so forth. However, a common feature of this semiconductor generation is the large band gap (E g ~3.2 eV) which restricts the efficiency of sunlight in stimulating photochemical reactions.…”