Study on interfacial reaction of Ti/AlN by SIMS, RBS and XRD

Abstract

A 200 nm Ti film was deposited on a polished AlN ceramic substrate at 200 °C by electron beam evaporation and then annealed under high vacuum conditions. The MCs+‐SIMS technique (detecting MCs+ secondary ions under Cs+ primary ion bombardment, where M is the element to be analysed), RBS and x‐ray diffraction (XRD) measurements were employed to probe the solid interfacial reaction between Ti and AlN from 200 °C to 850 °C, and the variation of interfacial composition distribution with annealing temperature and time was given. Ternary aluminides were discovered and the formation and development of the aluminides were observed in the interfacial region. The results indicate that the MCs+‐SIMS technique is an effective method to study the interfacial reaction between metal and ceramic. Copyright © 1999 John Wiley & Sons, Ltd.

Microstructural Development of the AlN/Ti Diffusion Couple Annealed at 1000°C

“…displayed the interfacial reaction zone of AlN/Ti after annealing at 1000°C/0.5 h, indicating the presence of δ‐TiN and α 2 ‐Ti 3 Al at the AlN/Ti interface. Some investigations 7,8,19 have reported that δ‐TiN and TiAl 3 are initially formed at the AlN/Ti interface after annealing between 600° and 800°C. Pinkas et al 8 .…”

“…6(b). Excess Al atoms may proceed further beyond the α 2 ‐ Ti 3 Al layer into Ti, forming an α‐Ti(Al) solid solution and probably a two‐phase region (α‐Ti+β‐Ti), according to the Ti–Al–N ternary phase diagram 19 . While Al or N atoms diffuse into β‐Ti (A2, bcc) during annealing at 1000°C, the dissolution of up to 5 at.% Al and/or N atoms makes α‐Ti (A3, hcp) relatively stable with respect to β‐Ti.…”

“…Excess Al atoms may proceed further beyond the a 2 -Ti 3 Al layer into Ti, forming an a-Ti(Al) solid solution and probably a two-phase region (a-Ti1b-Ti), according to the Ti-Al-N ternary phase diagram. 19 While Al or N atoms diffuse into b-Ti (A2, bcc) (C) Stage 3: Formation of t 1 -Ti 3 AlN in the d-TiN Layer: Following the formation of a 2 -Ti 3 Al, some Al atoms tend to accumulate at the d-TiN grain boundaries and then react with d-TiN to form t 1 -Ti 3 AlN, as shown in Fig. 6(c).…”

“…Summary of Some Previous Studies on the AlN/Ti Interfacial Reactions XPS, RBS, and TEM TiAl 3 -TiN-Ti 4 N 3Àx -Ti 2 N H eet al7 Al at the AlN/Ti interface. Some investigations7,8,19 have reported that d-TiN and TiAl 3 are initially formed at the AlN/Ti interface after annealing between 6001 and 8001C. Pinkas et al…”

Synthesis of AlN–TiN nanostructured composite powder by reactive ball milling and subsequent thermal treatment

“…Therefore, the Ti-rich nitride would be formed. The radii of N, Ti and Al atoms are 0.07 nm, 0.1448 nm and 0.1431 nm [50], respectively, so nitrogen atoms diffuse mainly interstitially in the Ti lattice and should have a higher diffusion velocity than that of Al atoms which diffuse mainly by substitution. Because differences in diffusion velocities between Al and N atoms will result in a different gradient distribution in the diffusion direction, it can be assumed that titanium nitride was first formed in the nitrogen concentrated regions such as grain boundaries and then in the whole powder matrices.…”