Study on induced work-function variation of titanium metal gate on various electrical parameters for delta-doped layer germanium source vertical tunnel FET

Vanlalawmpuia, K.; Bhowmick, Brinda

doi:10.1007/s10825-021-01686-8

Cited by 6 publications

(3 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We investigated the influence of strain on I on by considering the deformation potential (DP) model. 42,52,53,72 Like stress, strain also increases I on . Figure 9d compares strain-induced ΔI on for Si and Ge.…”

Section: Resultsmentioning

confidence: 99%

“…72 Further, the deformation potential (DP) model was activated to consider the strain impact on the device electrostatics. 42,52,53,72 Besides, the interfacial traps at the Si (or Ge) and Al 2 O 3 gate dielectric were accounted for by adding D it of to 3 × 10 13 cm −2 V −1 and 2 × 10 11 cm −2 V −1 at the Si/Al 2 O 3 and Ge/Al 2 O 3 interfaces, respectively. 67,73 The simulation method is validated by calibrating it to the experimental result.…”

Section: Device Structure and Simulation Set Upmentioning

confidence: 99%

“…Further, various researches have revealed that a miniaturized device in nanoscale may encounter the stress-strain impact on its electrical performance. [41][42][43][44][45][46][47][48][49][50][51][52][53] In this regard, the basic structure of a VSTB FET also indubitably exerts heavy stress over the thin vertical body as it is surrounded by thick dielectric walls and other parts of the device. Therefore, the study of the stress-strain influence on the performance of a VSTB FET is an integral part of its reliability establishment.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Silicon and Germanium Vertical Super-Thin Body (VSTB) FET: A Comparative Performance Overview Including Architectural Stress-Strain Impact

Barman

Baishya

2022

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

This article aims to develop a comprehensive understanding of the comparative performance of a vertical super-thin body (VSTB) field-effect transistor in terms of two device material variations (silicon/Si and germanium/Ge) with the aid of 3-D Senaturus TCAD tool. More importantly, the influence of the inevitable architectural stress (exerted over the thin body by the thick dielectric walls) on the transfer characteristic of the device is also addressed for Si/Ge device. From the perspective of suitability in high-performance circuits, Ge outperforms Si by enhancing on-state current (Ion) by 30.28, 30.29, 29.91, and 26.98 µA at channel length of 10, 20, 30, and 40 nm, respectively, with an improvable deterioration in off-state leakage current, subthreshold swing, and drain-induced-barrier-lowering. Further, a three-dimensional stress analysis reveals that stress increases Ion more in Ge-device compared to its Si-counterpart. As expected, a similar nature is observed for the strain application. Finally, the radio-frequency study shows that although the relative performance of Ge with respect to Si in terms of input capacitance, gate-drain capacitance, and output conductance is inferior, the greater transconductance of Ge than Si lowers intrinsic delay and enhances the peaks of intrinsic gain, unit-gain cut-off frequency, and gain-bandwidth-product.

show abstract

Section: Resultsmentioning

confidence: 99%