Study on gate‐source voltage oscillation suppression in SiC MOSFETs based on LCR parallel branch
Changzhou Yu,
Jiajia Li,
Yukun Gu
et al.
Abstract:Silicon carbide (SiC) MOSFETs are garnering widespread attention due to their superior performance in high‐temperature, high‐frequency, and high‐voltage applications, emerging as the preferred power semiconductor devices in converters for photovoltaic power generation and new energy vehicles. However, SiC MOSFETs are prone to gate drive and drain‐source voltage oscillations during high‐speed switching events, resulting in diminished system efficiency, increased electromagnetic interference, reduced device safe… Show more
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