Study on Evolution of Micropipes from Hexagonal Voids in 4H-SiC Crystals by Cathodoluminescence Imaging

Arora, Aman; Patel, Ankit; Yadav, B. S.; Goyal, Anshu; Thakur, O. P.; Garg, Arun; Raman, R.

doi:10.1017/s1431927621000039

Cited by 3 publications

(3 citation statements)

References 28 publications

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“…In Case II (dark), the increase in the PL intensity of the N–B DAP originates from an increase in the RDA of C D−A [ 15 ]. Considering that the DAP recombination rate is an efficient measure of the emission luminescence [ 29 , 30 , 31 , 32 ], and the RDA is proportional to the donor concentration (C D ) and the acceptor concentration (C A ), the correlation between the C D , C A , and PL properties can be evaluated, as described previously [ 21 ]. The increased N–B DAP peak intensity for Case II was, therefore, attributed to an increase in C N .…”

Section: Resultsmentioning

confidence: 99%

“…The increased N–B DAP peak intensity for Case II was, therefore, attributed to an increase in C N . Aukerman and Millea’s model [ 30 , 31 , 32 ] suggests that the correlation between DAP recombination and concentration causes the PL intensity to increase with an increase in the difference between C N and C B ; this is known as the N–B concentration gap. More specifically, when the N–B concentration gap is larger than C B , saturation occurs, whereas when the N–B concentration gap is more than twice C B , the PL emission intensity decreases due to the presence of non-radiative defects (non-emission), as evidenced in Case II [ 29 ].…”

Section: Resultsmentioning

confidence: 99%

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Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis

Kim,

Kim

et al. 2024

Materials

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The discoloration switching appearing in the initial and final growth stages of 4H-silicon carbide (4H-SiC) single crystals grown using the physical vapor transport (PVT) technique was investigated. This phenomenon was studied, investigating the correlation with linear-type micro-pipe defects on the surface of 4H-SiC single crystals. Based on the experimental results obtained using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and micro-Raman analysis, it was deduced that the orientation of the 4H-SiC c-axis causes an axial change that correlates with low levels of carbon. In addition, it was confirmed that the incorporation of additional elements and the concentrations of these doped impurity elements were the main causes of discoloration and changes in growth orientation. Overall, this work provides guidelines for evaluating the discoloration switching in 4H-SiC single crystals and contributes to a greater understanding of this phenomenon.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis

Kim,

Kim

et al. 2024

Materials

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“…A unique transitional configuration of superscrew dislocations to closed-core elementary screw dislocations was proposed by Daisuke Nakamura et al, which showed good ability to explain the decrease of micropipe density during crystal growth [ 10 ]. Arora, Aman, et al used cathodoluminescence (CL) imaging technology to confirm that multiple micropipes could originate from a single hexagonal void, and energy-dispersive spectroscopy (EDS) showed that the inside of the micropipe walls exhibited higher levels of carbon [ 11 ]. However, some research questions on micropipes have yet to be successfully examined.…”

Section: Introductionmentioning

confidence: 99%

Micropipes in SiC Single Crystal Observed by Molten KOH Etching

Wang

et al. 2021

Materials

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Micropipe, a “killer” defect in SiC crystals, severely hampers the outstanding performance of SiC-based devices. In this paper, the etching behavior of micropipes in 4H-SiC and 6H-SiC wafers was studied using the molten KOH etching method. The spectra of 4H-SiC and 6H-SiC crystals containing micropipes were examined using Raman scattering. A new Raman peak accompanying micropipes located near −784 cm−1 was observed, which may have been induced by polymorphic transformation during the etching process in the area of micropipe etch pits. This feature may provide a new way to distinguish micropipes from other defects. In addition, the preferable etching conditions for distinguishing micropipes from threading screw dislocations (TSDs) was determined using laser confocal microscopy, scanning electron microscopy (SEM) and optical microscopy. Meanwhile, the micropipe etching pits were classified into two types based on their morphology and formation mechanism.

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Prismatic dislocation loops in crystalline materials with empty and coated channels

Kolesnikova

Chernakov

Gutkin

et al. 2022

European Journal of Mechanics - A/Solids

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Study on Evolution of Micropipes from Hexagonal Voids in 4H-SiC Crystals by Cathodoluminescence Imaging

Abstract: Abstract

Cited by 3 publications

References 28 publications

Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis

Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis

Micropipes in SiC Single Crystal Observed by Molten KOH Etching

Prismatic dislocation loops in crystalline materials with empty and coated channels

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